机构

• 物理研究所 [1]
• 金属研究所 [1]
• 长春光学精密机械与物... [1]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [4]

内容类型

• 会议论文 [2]
• 期刊论文 [2]

发表日期

• 2021 [1]
• 2010 [1]
• 2008 [1]
• 2001 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Advances in G-stack diode laser using macro-channel water cooling and high thermal conductivity material packaging 会议论文  OAI收割 Virtual, Online, United states, 2021-03-06 作者:  Han, Yang;  Sun, Lichen;  Fu, Tuanwei;  Gao, Lijun;  Zheng, Yanfang   |  收藏  |  浏览/下载：71/0  |  提交时间：2021/06/28 G-Stack Diode Laser  Macro-Channel  High Thermal Conductivity Material  Continuous Wave Mode  Low Thermal Resistance   Boson peak in Sm-Al-Co ternary metallic glasses and its possible structural origin 期刊论文  OAI收割 Chinese Physics B, 2010, 卷号: 19, 期号: 1 H. M. Liu; C. L. Lu; K. F. Wang; J. M. Liu; Q. Wang; C. Dong 收藏  |  浏览/下载：22/0  |  提交时间：2012/04/13 metallic glasses  Boson peak  specific heat  mode-dynamics model  thermal-conductivity  heat  excitations  liquids   808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.   Low temperature threshold field of K(0.3)MoO(3) determined by dielectric measurements 期刊论文  OAI收割 PHYSICAL REVIEW B, 2001, 卷号: 63, 期号: 3 Jing, XN; He, HF; Li, SL; Zhang, DL 收藏  |  浏览/下载：27/0  |  提交时间：2013/09/18 CHARGE-DENSITY-WAVE  MODE CONDUCTIVITY  BLUE BRONZE  RB0.30MOO3  K0.30MOO3  DYNAMICS  NBSE3