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	Performance improvement of a discrete dynode electron multiplication system through the optimization of secondary electron emitter and the adoption of double-grid dynode structure 期刊论文 OAI收割 Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2024, 卷号: 1062 作者: Liu, Biye; Li, Jie; Chen, Song; Yang, Jishi; Hu, Wenbo \| 收藏 \| 浏览/下载：39/0 \| 提交时间：2024/04/08 Discrete dynode electron multiplication system Secondary electron emission MgO/(MgO–Au)/Au multilayer film MgO layer thickness Double-grid structure
	Secondary electron emission characteristics of the Al2O3/MgO double-layer structure prepared by atomic layer deposition 期刊论文 OAI收割 CERAMICS INTERNATIONAL, 2021, 卷号: 47, 期号: 7, 页码: 9866-9872 作者: Cao, Weiwei; Wang, Bo; Yang, Yang; Zhu, Bingli; Guo, Junjiang \| 收藏 \| 浏览/下载：65/0 \| 提交时间：2021/04/19 Al2O3 film MgO film Secondary electron emission Atomic layer deposition Microchannel plate
	The effect of hfo2 on the magnetic anisotropy, electrical structure and microstructure of cofeb/mgo films 期刊论文 iSwitch采集 Journal of alloys and compounds, 2017, 卷号: 725, 页码: 425-432 作者: Li, Minghua; Shi, Hui; Chen, Xi; Fang, Shuai; Han, Gang 收藏 \| 浏览/下载：54/0 \| 提交时间：2019/04/23 Hfo2 Cofeb/mgo Magnetic anisotropy Film defects Oxygen migration
	The effect of HfO2 on the magnetic anisotropy, electrical structure and microstructure of CoFeB/MgO films 期刊论文 OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 725, 页码: 425-432 作者: Zhang, P; Shi, H; Li, MH; Chen, X; Fang, S \| 收藏 \| 浏览/下载：29/0 \| 提交时间：2019/08/27 HfO2 CoFeB/MgO Magnetic anisotropy Film defects Oxygen migration
	Low drive-voltage and high-bandwidth electro-optic modulators based on BaTiO3 thin-film waveguides (EI CONFERENCE) 会议论文 OAI收割 Science and Technology of Dielectrics for Active and Passive Photonic Devices - 210th Electrochemical Society Meeting, October 29, 2006 - November 3, 2006, Cancun, Mexico Sun D. G.; Fu X. H.; Liu Z. F.; Ho S. T.; Wessels B. W. 收藏 \| 浏览/下载：46/0 \| 提交时间：2013/03/25 We investigated electro-optic modulator structures to target low drive voltage high-speed modulation and small device size with c-axis grown BaTiO3/MgO ferro-electric thin films. In this study the calculations are focused on the ideal thin film with a quadratic relation between the half-wave drive voltage V and the interaction length L in the electro-optic modulation case we obtained in previous work. With the quadratic electro-optic modulating relation and the optimal rib waveguide structure of BaTiO3/MgO thin films the frequency-voltage-size performances for 2.5GHz 10GHz 40GHz and 100GHz modulation bandwidths have been obtained under half-wave drive voltages of 0.8V 1.6V 3.0V and 4.8V respectively for the ideal film with r51=730 pm/V at 1550nm wavelength where both the phase velocity matching condition and the conductor induced microwave attenuation are considered. The required device lengths to achieve these four typical values of modulation bandwidth are 3.3 mm 0.8 mm 0.4 mm and 0.2 mm respectively. With the c-axis grown BaTiO3/MgO crystal thin films and the quadratic electro-optic modulating relation an electro-optic coefficient of reff=180 pm/V for the c-axis grown BaTiO3/MgO ferro-electric thin films was measured which is relatively far from the ideal value of r51=560 pm/V. copyright The Electrochemical Society.
	Interface engineering for lattice-matched epitaxy of ZnO on (La,Sr)(Al,Ta)O-3(111) substrate 期刊论文 OAI收割 APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 20 Ying, MJ; Du, XL; Liu, YZ; Zhou, ZT; Zeng, ZQ; Mei, ZX; Jia, JF; Chen, H; Xue, QK; Zhang, Z 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/09/18 MOLECULAR-BEAM EPITAXY MGO BUFFER LAYER SAPPHIRE SUBSTRATE GROWTH FILM POLARITY MBE