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A novel fatigue design modeling method under small-sample test data with generalized fiducial theory 期刊论文  OAI收割
APPLIED MATHEMATICAL MODELLING, 2024, 卷号: 128
作者:  
Zou, Qingrong;  Wen JC(温济慈)
  |  收藏  |  浏览/下载:7/0  |  提交时间:2024/12/02
Collision integrals of electronically excited atoms in air plasmas. I. N-N and O-O interactions 期刊论文  OAI收割
PLASMA SOURCES SCIENCE & TECHNOLOGY, 2023, 卷号: 32, 期号: 12, 页码: 28
作者:  
Zhao, Wensheng;  Hong, Qizhen;  Yang, Chao;  Sun, Quanhua;  Hu, Yuan
  |  收藏  |  浏览/下载:17/0  |  提交时间:2024/01/02
Bayesian model averaging for probabilistic S-N curves with probability distribution model form uncertainty 期刊论文  OAI收割
INTERNATIONAL JOURNAL OF FATIGUE, 2023, 卷号: 177, 页码: 11
作者:  
Zou, Qingrong;  Wen, Jici;  Wen JC(温济慈)
  |  收藏  |  浏览/下载:18/0  |  提交时间:2023/12/18
Robust quantile regression analysis for probabilistic modelling of S-N curves 期刊论文  OAI收割
INTERNATIONAL JOURNAL OF FATIGUE, 2023, 卷号: 167, 页码: 14
作者:  
Zou, Qingrong;  Zhao, Jianxi;  Wen JC(温济慈)
  |  收藏  |  浏览/下载:36/0  |  提交时间:2023/02/03
Interactive effects of elevated CO2 and drought on photosynthetic capacity and PSII performance in maize 期刊论文  OAI收割
PHOTOSYNTHETICA, 2014, 卷号: 52, 期号: 1, 页码: 63-70
作者:  
Zong, Y. Z.;  Wang, W. F.;  Xue, Q. W.;  Shangguan, Z. P.
收藏  |  浏览/下载:23/0  |  提交时间:2015/12/11
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
收藏  |  浏览/下载:29/0  |  提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Competition mechanism between microstructure type and inclusion level in determining VHCF behavior of bainite/martensite dual phase steels 期刊论文  OAI收割
International Journal of Fatigue, 2011, 卷号: 33, 期号: 3, 页码: 500-506
Y. Yu; J. L. Gu; F. L. Shou; L. Xu; B. Z. Bai; Y. B. Liu
收藏  |  浏览/下载:27/0  |  提交时间:2012/04/13
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:32/0  |  提交时间:2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.  
Effect of surface treatments on fatigue life of Ti-6-22-22 alloy at room and high temperatures 期刊论文  OAI收割
Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing, 2004, 卷号: 383, 期号: 2, 页码: 283-288
Z. L. Yu; S. X. Li; Y. Y. Liu; Q. Y. Zhang; J. F. Lei; Z. X. Mu
收藏  |  浏览/下载:11/0  |  提交时间:2012/04/14
A Method for Measuring Thermal Radiation Properties of Semi-Transparent Films 期刊论文  OAI收割
JOURNAL OF THERMAL SCIENCE, 1992, 卷号: 1, 期号: 1, 页码: 58,63
Y.P. Zhang; X.S. Ge; X.G. Liang
收藏  |  浏览/下载:11/0  |  提交时间:2013/03/13