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	Experimental and thermodynamic analysis of NH3 absorption in dual-functionalized pyridinium-based ionic liquids 期刊论文 OAI收割 JOURNAL OF MOLECULAR LIQUIDS, 2021, 卷号: 323, 页码: 10 作者: Yuan, Lei; Gao, Hongshuai; Jiang, Haiyan; Zeng, Shaojuan; Li, Tao \| 收藏 \| 浏览/下载：21/0 \| 提交时间：2021/03/29 Ionic liquids Dual-functionalization NH3 absorption Chemical reaction Thermodynamic model
	NH3 absorption performance and reversible absorption mechanisms of protic ionic liquids with six-membered N-heterocyclic cations 期刊论文 OAI收割 SEPARATION AND PURIFICATION TECHNOLOGY, 2020, 卷号: 248, 页码: 10 作者: Li, Pengfei; Shang, Dawei; Tu, Wenhui; Zeng, Shaojuan; Nie, Yi \| 收藏 \| 浏览/下载：47/0 \| 提交时间：2020/07/23 Protic ionic liquids NH3 absorption N-heterocyclic cations Pyridinium Piperidinium
	Highly efficient and reversible absorption of NH3 by dual functionalised ionic liquids with protic and Lewis acidic sites 期刊论文 OAI收割 JOURNAL OF MOLECULAR LIQUIDS, 2020, 卷号: 312, 页码: 7 作者: Shang, Dawei; Zeng, Shaojuan; Zhang, Xiangping; Zhang, Xiaochun; Bai, Lu \| 收藏 \| 浏览/下载：34/0 \| 提交时间：2020/10/30 Dual functionalised Protic ionic liquids Li+-based anion NH3 absorption Multiple interactions
	Dual-functionalized protic ionic liquids for efficient absorption of NH3 through synergistically physicochemical interaction 期刊论文 OAI收割 JOURNAL OF CHEMICAL TECHNOLOGY AND BIOTECHNOLOGY, 2020, 卷号: 95, 期号: 6, 页码: 1815-1824 作者: Yuan Lei; Zhang Xiangping; Ren Baozeng; Yang Yingliang; Bai Yinge \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2020/06/15 dual-functionalized protic ILs (DPILs) NH3 absorption synergistically physicochemical interaction selectivity
	Protic ionic liquid-based deep eutectic solvents with multiple hydrogen bonding sites for efficient absorption of NH3 期刊论文 OAI收割 AICHE JOURNAL, 2020, 页码: 9 作者: Cao, Yongkang; Zhang, Xiangping; Zeng, Shaojuan; Liu, Yanrong; Dong, Haifeng \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2020/06/15 deep eutectic solvents hydrogen bonding multiple NH3 absorption protic ionic liquids
	Studies on the physical properties variations of protic ionic liquid during NH3 absorption 期刊论文 OAI收割 JOURNAL OF MOLECULAR LIQUIDS, 2019, 卷号: 296, 页码: 7 作者: Yang, Bingbing; Shang, Dawei; Tu, Wenhui; Zeng, Shaojuan; Bai, Lu \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2020/03/24 Protic ionic liquid NH3 absorption Density variation Viscosity variation
	Enhanced NH3 capture by imidazolium-based protic ionic liquids with different anions and cation substituents 期刊论文 OAI收割 JOURNAL OF CHEMICAL TECHNOLOGY AND BIOTECHNOLOGY, 2018, 卷号: 93, 期号: 5, 页码: 1228-1236 作者: Shang, Dawei; Bai, Lu; Zeng, Shaojuan; Dong, Haifeng; Gao, Hongshuai \| 收藏 \| 浏览/下载：34/0 \| 提交时间：2018/06/11 Nh3 Solubility Protic And Conventional Ils Vapor Liquid Equilibrium Dynamic Absorption Influence Of Ils Structures
	Thermodynamic analysis of an absorption system using [bmim]Zn2Cl5/NH3 as the working pair 期刊论文 OAI收割 ENERGY CONVERSION AND MANAGEMENT, 2014, 卷号: 85, 页码: 13-19 作者: Chen, Wei; Liang, Shiqiang; Guo, Yongxian; Tang, Dawei 收藏 \| 浏览/下载：38/0 \| 提交时间：2015/12/17 [bmim]Zn2Cl5/NH3 Absorption system Coefficient of performance (COP) Circulation ratio Exergy efficiency
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.