机构

• 长春光学精密机械与物... [1]
• 半导体研究所 [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [3]

内容类型

• 期刊论文 [2]
• 会议论文 [1]

发表日期

• 2024 [1]
• 2011 [1]
• 2005 [1]

学科主题

• 光电子学 [1]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Analysis and design of voltage doubling rectifier circuit for power supply of neutron source device towards BNCT 期刊论文  OAI收割 NUCLEAR ENGINEERING AND TECHNOLOGY, 2024, 卷号: 56 作者:  Wang, Rixin;  Liang, Lizhen;  Gong, Congguo;  Wang, Longyang;  Tao, Jun   |  收藏  |  浏览/下载：9/0  |  提交时间：2024/11/20 Boron neutron capture therapy  DC high voltage power supply  Voltage doubling rectifier circuit  Output voltage characteristics   Design of thermostat system based on Proteus simulation software (EI CONFERENCE) 会议论文  OAI收割 2011 International Conference on Electronic and Mechanical Engineering and Information Technology, EMEIT 2011, August 12, 2011 - August 14, 2011, Harbin, China Han Z.; Song K. 收藏  |  浏览/下载：39/0  |  提交时间：2013/03/25 In order to solve the problem of precise temperature control  the thermoelectric cooler (TEC) principle widely used is analyzed for the design of the whole control process and selection of control parameters  and then accurate simulation model of the TEC is established in Proteus simulation software. Moreover  combined with the traditional circuit simulation model  the temperature control loop is designed  and the response characteristics of the system are tested using an input signal similar to the unit-step function to achieve the precise temperature control. Simulation results show that the proposed control circuits can precisely convert error signal to output voltage sent to TEC model  and TEC model behaves approximately like a two-pole system. The first pole starts at 20mHz and a second pole at 1Hz. 2011 IEEE.   Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885 Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W 收藏  |  浏览/下载：119/47  |  提交时间：2010/03/17 摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA  output light power of 4.5 mW  and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover  over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device  10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.