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	Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文 OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者: Zhang T. 收藏 \| 浏览/下载：33/0 \| 提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn TMGa AsH3 and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power their temperatures were detected by a thermocouple and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm In0.82Ga0.18As absorption layer with the thickness of 2.8 m and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied the curves of the I-V characteristics the range of response spectrum and the detectivity (D*) were obtained. (2013) Trans Tech Publications Switzerland.
	Enhanced photovoltaic properties of solar cell based on ITO/PEDOT:PSS/ZnO:P3HT/Ag by an annealing treatment SCI/SSCI论文 OAI收割 2013 Wang X. M.; Yu C. Q.; Wu J. X. 收藏 \| 浏览/下载：23/0 \| 提交时间：2014/12/24 Photoelectric devices Solar power ZnO film Annealing treatment ZnO/P3HT interface J-V curves polymer layer
	Dynamic p-i and p-v curves for semiconductor lasers and modulators 期刊论文 iSwitch采集 Journal of lightwave technology, 2008, 卷号: 26, 期号: 17-20, 页码: 3369-3375 作者: Zhu, Ning Hua; Hasen, Qi Qi Ge; Zhang, Hong Guang; Wen, Ji Min; Xie, Liang 收藏 \| 浏览/下载：36/0 \| 提交时间：2019/05/12 Electro-absorption modulator (eam) Frequency response Laser diode P-i curves P-v curves
	Dynamic P-I and P-V Curves for Semiconductor Lasers and Modulators 期刊论文 OAI收割 journal of lightwave technology, 2008, 卷号: 26, 期号: 17-20, 页码: 3369-3375 Zhu NH; Hasen QQG; Zhang HG; Wen JM; Xie L 收藏 \| 浏览/下载：218/51 \| 提交时间：2010/03/08 Electro-absorption modulator (EAM) frequency response laser diode P-I curves P-V curves
	Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文 OAI收割 Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W. 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/03/25 A set of ZnO/MgZnO heterostructures with well widths Lw varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：35/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.