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Enhanced gas selectivity induced by surface active oxygen in SnO/SnO2 heterojunction structures at different temperatures 期刊论文  OAI收割
RSC ADVANCES, 2019, 卷号: 9, 期号: 4, 页码: 1903-1908
作者:  
Yin Guilin;  Sun Jianwu;  Zhang Fang;  Yu Weiwei;  Peng Fang
  |  收藏  |  浏览/下载:51/0  |  提交时间:2019/11/13
Engineering Charge Transfer Characteristics in Hierarchical Cu2S QDs @ ZnO Nanoneedles with p-n Heterojunctions: Towards Highly Efficient and Recyclable Photocatalysts 期刊论文  OAI收割
Nanomaterials, 2019, 卷号: 9, 期号: 1, 页码: 20
作者:  
D.L.Han;  B.X.Li;  S.Yang;  X.Y.Wang;  W.Gao
  |  收藏  |  浏览/下载:37/0  |  提交时间:2020/08/24
Creation of Cu2O@TiO2 Composite Photocatalysts with p-n Heterojunctions Formed on Exposed Cu2O Facets, Their Energy Band Alignment Study, and Their Enhanced Photocatalytic Activity under Illumination with Visible Light 期刊论文  OAI收割
Acs Applied Materials & Interfaces, 2015, 卷号: 7, 期号: 3, 页码: 1465-1476
L. M.; Yang Liu, W. Y.; Sun, W. Z.; Li, Q.; Shang, J. K.
收藏  |  浏览/下载:27/0  |  提交时间:2015/05/08
Electronic logic gates from three-segment nanowires featuring two p-n heterojunctions 期刊论文  OAI收割
NPG ASIA MATERIALS, 2013, 卷号: 5
作者:  
Chen, Nan;  Chen, Songhua;  Ouyang, Canbin;  Yu, Yanwen;  Liu, Taifeng
  |  收藏  |  浏览/下载:21/0  |  提交时间:2019/04/09
Ultrafast photoelectric effects and high-sensitive photovoltages in perovskite oxides and heterojunctions 期刊论文  OAI收割
FRONTIERS OF PHYSICS IN CHINA, 2010, 卷号: 5, 期号: 2, 页码: 176
Guo, EJ; Lu, HB; Jin, KJ; Yang, GZ
收藏  |  浏览/下载:15/0  |  提交时间:2013/09/23
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.