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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
苏州纳米技术与纳米仿... [1]
新疆理化技术研究所 [1]
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OAI收割 [2]
内容类型
期刊论文 [2]
发表日期
2021 [1]
2015 [1]
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Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
OAI收割
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
  |  
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
Micro-electro-mechanical systems capacitive ultrasonic transducer with a higher electromechanical coupling coefficient
期刊论文
OAI收割
Micro & Nano Letters, 2015, 卷号: 10, 期号: 10, 页码: 4
作者:
Miao, J(苗静)
;
Shen, WJ(沈文江)
;
He, CD
;
Xue, CY
;
Xiong, JJ
收藏
  |  
浏览/下载:88/0
  |  
提交时间:2015/12/31
silicon
elemental semiconductors
silicon-on-insulator
wafer bonding
electromechanical effects
ultrasonic transducers
capacitive transducers
micromechanical devices
micromachining
vibrations
membranes
finite element analysis
reliability
capacitance
electromechanical coupling coefficient
capacitive micromachined ultrasonic transducer
impedance matching
propagation medium
microelectromechanical system capacitive ultrasonic transducer
silicon on insulator
wafer bonding
optimum geometric dimensions
membrane mechanical vibration
electrical characteristics
finite-element analysis
operation mode
device safety
device reliability
equivalent stress
operation-collapse voltage
bottom electrodes
glass substrate surface
parallel parasitic capacitance
Si
SiO2