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	Wavelength Drift Correction Method Based on Energy Redistribution 期刊论文 OAI收割 CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 2019, 卷号: 40, 期号: 8, 页码: 1600-1605 作者: Yu Bingwen; Jin Wei; Jin Qinhan; Liu Xu; Li Xiaodong \| 收藏 \| 浏览/下载：22/0 \| 提交时间：2021/02/02 PEAK DETECTION CORRECTION ALGORITHM MASS-SPECTRA CALIBRATION Wavelength drift correction Atomic emission spectrometry Energy redistribution
	Numerical study of strained ingaas quantum well lasers emitting at 2.33 mu m using the eight-band model 期刊论文 iSwitch采集 Chinese physics b, 2011, 卷号: 20, 期号: 7, 页码: 7 作者: Wang Ming; Gu Yong-Xian; Ji Hai-Ming; Yang Tao; Wang Zhan-Guo 收藏 \| 浏览/下载：62/0 \| 提交时间：2019/05/12 Band structure Eight-band k.p theory Strained quantum well Peak emission wavelength
	High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y. 收藏 \| 浏览/下载：29/0 \| 提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.
	High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.
	Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者: Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.