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	Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文 OAI收割 Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822 作者: Chen, Y. R.; Li, Z. M.; Zhang, Z. W.; Hu, L. Q.; Jiang, H. \| 收藏 \| 浏览/下载：16/0 \| 提交时间：2019/09/17 Data storage materials Resistive switching Metal-insulator-semiconductor Annealing effect Nonvolatile memory nonvolatile memory behaviors mechanism breakdown layer power ti Chemistry Materials Science Metallurgy & Metallurgical Engineering
	Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory 期刊论文 OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 722, 页码: 753-759 作者: Zhou,Guangdong; Xiao,Lihua; Zhang,Shuangju; Wu,Bo; Liu,Xiaoqin \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2017/10/23 Electric-field Devices Bipolar Films Heterostructures Transition Behaviors Filament Matrix Cells Bilay Niox/tio2 Films Resistive Switching Memory Migration Of Oxygen Vacancy Ag Conduction Filamens
	Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures 期刊论文 OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2016, 卷号: 8, 期号: 48, 页码: 32948-32955 作者: Bai, Yu; Wang, Zhan Jie; Chen, Yan Na; Cui, Jian Zhong \| 收藏 \| 浏览/下载：27/0 \| 提交时间：2021/02/02 ferroelectric heterostructures resistive switching behaviors ON/OFF ratio ferroelectric polarization interfacial built-in field
	Study on the "negative" resistance switching properties in ti/la0.7ca0.3mno3/pt sandwiches devices 期刊论文 iSwitch采集 Journal of inorganic materials, 2010, 卷号: 25, 期号: 2, 页码: 151-156 作者: Liu Xin-Jun; Li Xiao-Min; Wang Qun; Yang Rui; Cao Xun 收藏 \| 浏览/下载：30/0 \| 提交时间：2019/05/10 Pulsed laser deposition(pld) Resistive switching behaviors Electric-pulse-induced resistance switching Manganite films