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	Response bias-related impairment of early subjective face discrimination in social anxiety disorders: An event-related potential study 期刊论文 OAI收割 JOURNAL OF ANXIETY DISORDERS, 2017, 卷号: 47, 期号: 0, 页码: 10-20 作者: Qi, Yanyan; Gu, Ruolei; Cao, Jianqin; Bi, Xuejing; Wu, Haiyan 收藏 \| 浏览/下载：39/0 \| 提交时间：2017/05/31 Memory bias N170 Response bias Social anxiety disorder Social evaluation Social rejection Social phobia Expectancy bias
	Distribution of gyroscope accuracy parameters for E-O stabilization platform (EI CONFERENCE) 会议论文 OAI收割 2011 International Conference on Electric Information and Control Engineering, ICEICE 2011, April 15, 2011 - April 17, 2011, Wuhan, China 作者: Zhang X.; Zhang X.; Zhang X.; Jiang H. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 E-O stabilization platform performance is partly decided by gyroscope precision so it is important to choose a gyroscope with proper accuracy for an E-O stabilization platform. Based on the method of using a gyroscope in practice gyroscope error model is established. With the gyroscope error model gyroscope accuracy parameters that is bias repeatability bias stability scale factor scale factor nonlinearity output noise and bandwidth are separately analyzed. According to the concretely required performance indices for an E-O platform means of distribution of gyroscope accuracy parameters is proposed. A MEMS gyroscope is tested to get the parameters. Bias stability of the gyroscope is 0.08 /s while the bandwidth is 60 Hz. Output noise both at zero input and at nonzero input is analyzed by means of PSD to get the result that nonzero output noise is higher than zero output noise. Frequency response result of the gyroscope is dealt by means of correlation analysis. With all the tested result and the method of distribution of gyroscope accuracy parameters it is clear that how the gyroscope errors works in an E-O servo system. The principle of distribution of gyroscope accuracy parameters is helpful for choosing appropriate gyroscope for an E-O platform. 2011 IEEE.
	Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China 作者: Zhang J.; Li B.; Li B.; Li B.; Zhao Y. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 In recent years ZnMgO semiconductor alloys with a direct bandgap tunable between 3.37 eV and 7.8 eV become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m 5 m and 10 m respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns 170 ns and 230 ns for the devices with different finger pitches of 2 m 5 m and 10 m respectively..