中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共8条，第1-8条

帮助

条数/页：排序方式：
	复合聚硅铝三十絮凝剂的混凝性能研究期刊论文 OAI收割环境科学与技术, 2012, 卷号: 1, 期号: 3, 页码: 47-50 叶长青; 徐绪铮; 王东升收藏 \| 浏览/下载：38/0 \| 提交时间：2014/12/04 Al30 Si 复合絮凝剂混凝腐殖酸高岭土
	复合聚硅铝三十絮凝剂的混凝性能研究期刊论文 OAI收割环境科学与技术, 2012, 卷号: 35, 期号: 3 , 页码: 47-50 叶长青; 徐绪铮; 王东升 \| 收藏 \| 浏览/下载：26/0 \| 提交时间：2012/06/11 Al30 Si 复合絮凝剂混凝腐殖酸高岭土
	复合聚硅铝三十絮凝剂的混凝性能研究期刊论文 OAI收割环境科学与技术, 2012, 卷号: 35.0, 期号: 003, 页码: 47-50 作者: 叶长青; 徐绪铮; 王东升 \| 收藏 \| 浏览/下载：1/0 \| 提交时间：2024/05/07 Al30 Si 复合絮凝剂混凝腐殖酸高岭土
	Effect of In-Situ TiB(2) Particles on the Microstructure of Spray-Formed 70Si-Al Alloy 期刊论文 OAI收割 Materials Transactions, 2011, 卷号: 52, 期号: 8, 页码: 1646-1649 L. Zhang; G. S. Gan; B. Yang 收藏 \| 浏览/下载：20/0 \| 提交时间：2012/04/13 70silicon-aluminum alloy spray forming TiB(2) particles grain growth semisolid state si-30al
	Si diffusion path for pit-free graphene growth on SiC(0001) 期刊论文 OAI收割 PHYSICAL REVIEW B, 2011, 卷号: 84, 期号: 19 Zhu, CX; Xu, ZG; Huo, ZL; Yang, R; Zheng, ZW; Cui, YX; Liu, J; Wang, YM; Shi, DX; Zhang, GY; Li, FH; Liu, M 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/09/24 SELF-DIFFUSION EPITAXIAL GRAPHENE SINGLE-CRYSTALS RECONSTRUCTION SI-30
	Structural Characteristics, Electronic Structure, and Thermoelectric Property of New Sb-Based Type-I Clathrates from Density Functional Theory Calculations 期刊论文 OAI收割 Chemistry of Materials, 2010, 卷号: 22, 期号: 13, 页码: 4007-4018 L. H. Li, L. Chen, J. Q. Li and L. M. Wu 收藏 \| 浏览/下载：59/0 \| 提交时间：2012/11/02 augmented-wave method rigid-band model crystal-structure thermal-conductivity transport-properties ge substitution ba8al14si31 sr8ga16ge30 moments
	Structure versus electron effects in the growth mode of pentacene on metal-induced Si(111)-root 3x root 3 surfaces 期刊论文 OAI收割 JOURNAL OF CHEMICAL PHYSICS, 2008, 卷号: 129, 期号: 3 Teng, J; Guo, JD; Wu, KH; Wang, EH 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/09/24 SCANNING-TUNNELING-MICROSCOPY THIN-FILM TRANSISTORS AG/SI(111)-(ROOT-3 X ROOT-3)R30-DEGREES ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY AU(111) ENERGY POLYCRYSTALLINE DIFFRACTION MOLECULES CHEMISTRY
	Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者: Zhang Z.-W. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit the luminous uniformity has great improved but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED such as low field effect mobility low output current and threshold voltage shift. In this article a two-a-Si:H TFT pixel circuit was designed which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal the variety of Vth is smallest about 1.28V after a fixed stressing time of 1.33104min which shows the novel data signal timing can improved the driving TFT output-input current stability.