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	Data processing method of multi-position strap-down north seeking system based on SVD (EI CONFERENCE) 会议论文 OAI收割 2011 International Conference on Mechatronic Science, Electric Engineering and Computer, MEC 2011, August 19, 2011 - August 22, 2011, Jilin, China Shen C.-W.; Liu C.; Yu S.-B.; Wang Z.-Q.; Li J.-R. 收藏 \| 浏览/下载：34/0 \| 提交时间：2013/03/25 With the aim to fit the sin wave curve of a multi-position strap-down north seeking system and to calculate the real north angle accurately the principles of the system and the algorithm of singular value decomposition(SVD) are introduced. The factors influencing the measuring precision are also analyzed. Then the algorithm is adopted to fit curves. Experimental results indicate that the singular value decomposition is very precise for its error sum is 1.1102V and the squared error is 2.8mV. Moreover for phase angle measurement measured six times in same direction the squared error is 24 (1). The method based on SVD can satisfy the system precision requirements of curve-fitting north seeking systems. 2011 IEEE.
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	白果内酯在PC12细胞中对NO诱导的细胞毒性的保护作用(英文) 期刊论文 OAI收割 Acta Pharmacologica Sinica, 2000, 期号: 05, 页码: 6 作者: 宋伟; 管瀚俊; 朱兴族; 陈仲良; 殷梦龙 \| 收藏 \| 浏览/下载：145/0 \| 提交时间：2019/01/08 PC12细胞 SIN-1 神经毒素神经元细胞存活脂质过氧化作用神经保护剂抗氧化剂白果内酯
	Protective effect of bilobalide against nitric oxide-induced neurotoxicity in PC12 cells 期刊论文 OAI收割 ACTA PHARMACOLOGICA SINICA, 2000, 卷号: 21, 期号: 5, 页码: 415-420 作者: Song, W; Guan, HJ; Zhu, XZ; Chen, ZL; Yin, ML \| 收藏 \| 浏览/下载：18/0 \| 提交时间：2019/01/08 PC12 cells SIN-1 neurotoxins neurons cell survival lipid peroxidation neuroprotective agents antioxidants bilobalide