机构

• 长春光学精密机械与物... [3]
• 半导体研究所 [2]

采集方式

• OAI收割 [5]

内容类型

• 会议论文 [3]
• 期刊论文 [2]

发表日期

• 2011 [1]
• 2010 [1]
• 2007 [1]
• 2006 [1]
• 2005 [1]

学科主题

• 光电子学 [2]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Squeeze effect and coherent coupling behaviour in photonic crystal vertical-cavity surface-emitting lasers 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 11, 页码: article no.115104 作者:  Jiang B 收藏  |  浏览/下载：64/6  |  提交时间：2011/07/06 SINGLE-TRANSVERSE-MODE  POWER  POLARIZATION  OXIDATION   A novel photonic crystal vertical cavity surface emitting laser based on coherent coupling 期刊论文  OAI收割 chinese science bulletin, 2010, 卷号: 55, 期号: 2, 页码: 111-113 Liu AJ (Liu AnJin); Qu HW (Qu HongWei); Xing MX (Xing MingXin); Chen W (Chen Wei); Zhou WJ (Zhou WenJun); Zheng WH (Zheng WanHua) 收藏  |  浏览/下载：169/28  |  提交时间：2010/04/13 photonic crystal  vertical cavity surface emitting laser  coherent coupling  divergence angle  single mode  SINGLE-MODE  HIGH-POWER  HOLEY STRUCTURE  WAVELENGTH  TRANSVERSE  RELIEF  VCSELS   High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Zhang Y.;  Liu Y.;  Liu Y.;  Liu Y.;  Qin L. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation  lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure  a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure  with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.   High power diode pumped Vertical External-cavity Surface-emitting Lasers (VECSELS) (EI CONFERENCE) 会议论文  OAI收割 IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, September 18, 2006 - September 22, 2006, Shanghai, China 作者:  Qin L. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 We describe the theoretical analysis and calculations of the 980nm high-power diode-pumped vertical external cavity surface emitting laser (VECSEL). The VECSEL with active region of InGaAs/GaAsP/AlGaAs system can be operated near 500mw in a single transverse mode. 2006 IEEE.   980nm high power Vertical External-cavity Surface-emitting Semiconductor Lasers (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Ning Y.-Q.;  Wang L.-J.;  Wang L.-J.;  Qin L. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 We describe the design  fabrication  and calculation characteristics of the 980nm high-power diode-pumped vertical external-cavity surface-emitting laser(VECSEL).From our calculation  the VECSEL with active region of InGaAs/GaAsP/AlGaAs system can operate near 1w in a single transverse mode.