机构

• 新疆理化技术研究所 [4]
• 国家空间科学中心 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [5]

发表日期

• 2015 [2]
• 2014 [1]
• 2013 [2]

学科主题

• Physics [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8 作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao) 收藏  |  浏览/下载：27/0  |  提交时间：2017/09/14 SiGe heterojunction bipolar transistor  single event effect  three-dimensional numerical simulation  laser microbeam experiment   Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11 作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei) 收藏  |  浏览/下载：30/0  |  提交时间：2015/07/11 SiGe heterojunction bipolar transistor  single event effect  hardening design  dummy collector   Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24 作者:  Zhang, JX (Zhang Jin-Xin);  He, CH (He Chao-Hui);  Guo, HX (Guo Hong-Xia);  Tang, D (Tang Du);  Xiong, C (Xiong Cen)   |  收藏  |  浏览/下载：17/0  |  提交时间：2018/02/01 Sige Heterojunction Bipolar Transistor  Different Bias  Single Event Effect  3d Numerical Simulation   3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: - 作者:  Zhang Jin-Xin;  Guo Hong-Xia;  Guo Qi;  Wen Lin;  Cui Jiang-Wei 收藏  |  浏览/下载：40/0  |  提交时间：2013/11/07 SiGe heterojunction bipolar transistor  single event effect  charge collection  three-dimensional numerical simulation   A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 5, 页码: 56103 作者:  Sun Ya-Bin;  Fu Jun;  Xu Jun;  Wang Yu-Dong;  Zhou Wei 收藏  |  浏览/下载：23/0  |  提交时间：2015/10/29 single event transient (SET)  pulsed laser  charge collection  SiGe heterojunction bipolar transistor (HBT)