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CAS IR Grid
机构
半导体研究所 [4]
西安光学精密机械研究... [1]
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iSwitch采集 [2]
内容类型
期刊论文 [5]
发表日期
2015 [1]
2011 [1]
2010 [2]
2005 [1]
学科主题
光电子学 [2]
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Carbon-nanotube-based passively mode-locked fiber lasers modulated with sub-loop
期刊论文
OAI收割
optik, 2015, 卷号: 126, 期号: 6, 页码: 618-621
作者:
Cui, Yudong
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2015/07/24
Fiber laser
Mode locking
Modulation
Single-walled carbon nanotube
Tunable carrier generation and broadband data upconversion for rof systems based on stimulated brillouin scattering
期刊论文
iSwitch采集
Ieee transactions on microwave theory and techniques, 2011, 卷号: 59, 期号: 9, 页码: 2350-2356
作者:
Li, Wei
;
Zhu, Ning Hua
;
Wang, Li Xian
;
Qi, Xiao Qiong
;
Xie, Liang
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/05/12
Broadband data upconversion
Radio-over-fiber (rof)
Single-mode modulation (smm)
Single-sideband (ssb) modulation
Stimulated brillouin scattering (sbs)
Tunable carrier generation
Carrier generation and if signal up-conversion using optical injection locking and stimulated brillouin scattering
期刊论文
iSwitch采集
Optics communications, 2010, 卷号: 283, 期号: 24, 页码: 5207-5212
作者:
Li, Wei
;
Zhu, Ning Hua
;
Wang, Li Xian
;
Liu, Jian Guo
;
Qi, Xiao Qiong
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2019/05/12
Carrier generation
Frequency up-conversion
Optical injection locking
Single sideband modulation
Stimulated brillouin scattering
Single mode modulation
Carrier generation and IF signal up-conversion using optical injection locking and stimulated Brillouin scattering
期刊论文
OAI收割
optics communications, 2010, 卷号: 283, 期号: 24, 页码: 5207-5212
作者:
Wang LX
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  |  
浏览/下载:108/2
  |  
提交时间:2011/07/05
Carrier generation
Frequency up-conversion
Optical injection locking
Single sideband modulation
Stimulated Brillouin scattering
Single mode modulation
MODULATION
SYSTEMS
LASER
Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation
期刊论文
OAI收割
semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Zhou, GT
;
Wu, J
;
Wang, LF
;
Wang, W
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  |  
浏览/下载:119/47
  |  
提交时间:2010/03/17
摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA
output light power of 4.5 mW
and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover
over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device
10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.