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浏览/检索结果: 共15条，第1-10条 帮助

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1.5-MHz repetition rate passively Q-switched Nd: YVO4 laser based on WS2 saturable absorber 期刊论文  OAI收割
chinese physics b, 2017, 卷号: 26, 期号: 4
作者:  Wang, Xi;  Li, Lu;  Li, Jin-Ping;  Wang, Yong-Gang
收藏  |  浏览/下载：32/0  |  提交时间：2017/05/23
Nanosecond passively Q-switched Nd: YVO4 laser based on WS2 saturable absorber 期刊论文  OAI收割
laser physics, 2017, 卷号: 27, 期号: 4
作者:  Wang, Xi;  Li, Lu;  Wang, Yonggang;  Zhang, Ling;  Wen, Qiao
收藏  |  浏览/下载：28/0  |  提交时间：2017/05/02
Performance of diode-pumped continuous wave tunable and passively Q-switched Nd,Mg:LiTaO3 laser 期刊论文  OAI收割
optics communications, 2014, 卷号: 325, 页码: 92-94
作者:  Feng, T.
收藏  |  浏览/下载：25/0  |  提交时间：2015/03/26
Performance of diode-pumped continuous wave tunable and passively Q-switched Nd,Mg:LiTaO3 laser 期刊论文  OAI收割
opt. commun., 2014, 卷号: 325, 页码: 92
作者:  Feng, T.;  Li, T.;  Zhao, S.;  Li, Q.;  Yang, K.
收藏  |  浏览/下载：15/0  |  提交时间：2016/11/28
Performance of diode-pumped continuous wave tunable and passively Q-switched Nd,Mg:LiTaO3 laser 期刊论文  OAI收割
opt. commun., 2014, 卷号: 325, 页码: 92
作者:  Feng, T.;  Li, T.;  Zhao, S.;  Li, Q.;  Yang, K.
收藏  |  浏览/下载：17/0  |  提交时间：2016/11/28
Low-phonon PbF2:Tm3+-doped crystal for 1.9 mu m lasing 期刊论文  OAI收割
laser phys. lett., 2014, 卷号: 11, 期号: 11, 页码: 115802
作者:  Zhang, Peixiong;  Wan, Youbao;  Yin, Jigang;  Zhang, Lianhan;  Liu, Youchen
收藏  |  浏览/下载：20/0  |  提交时间：2016/11/28
Low-phonon PbF2:Tm3+-doped crystal for 1.9 mu m lasing 期刊论文  OAI收割
laser phys. lett., 2014, 卷号: 11, 期号: 11, 页码: 115802
作者:  Zhang, Peixiong;  Wan, Youbao;  Yin, Jigang;  Zhang, Lianhan;  Liu, Youchen
收藏  |  浏览/下载：28/0  |  提交时间：2016/11/28
Spectroscopy and laser operation of Ho:CaYAlO4 期刊论文  OAI收割
optical materials express, 2013, 卷号: 3, 期号: 3, 页码: 339-345
Dahua Zhou（周大华）, Juqing Di（狄聚青）, Changtai Xia（夏长泰）, Xiaodong Xu（徐晓东）, Feng Wu（吴锋）, Jun Xu（徐军）,Deyuan Shen, Ting Zhao, Adam Strzęp, Witold Ryba-Romanowski, and Radosław Lisiecki
收藏  |  浏览/下载：38/0  |  提交时间：2013/09/10
Growth and spectral characteristics of KYb(WO4)(2) crystal 期刊论文  OAI收割
Materials Research Innovations, 2008, 卷号: 12, 期号: 4, 页码: 162-165
Y. S. Huang; L. Z. Zhang; Z. B. Lin and G. F. Wang
收藏  |  浏览/下载：69/0  |  提交时间：2013/01/22
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:  Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y.
收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25
808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.