机构

• 力学研究所 [2]
• 长春光学精密机械与物... [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2022 [1]
• 2013 [1]
• 2012 [1]
• 2007 [1]

学科主题

• 固体力学::冲击动力... [1]
• 固体力学::制造工艺... [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Profile controlling technologies in ITER BTCC U-shaped case manufacturing process 期刊论文  OAI收割 FUSION ENGINEERING AND DESIGN, 2022, 卷号: 179 作者:  Feng, Siqing;  Song, Yuntao;  Wei, Jing;  Yin, Dapeng;  Liu, Peng   |  收藏  |  浏览/下载：36/0  |  提交时间：2022/12/23 BTCC U-shaped case  Profile controlling  Segmenting  Welding  Residual stress treatment   Geometrical scaling law for laser shock processing 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 114, 期号: 4, 页码: 043105/1-043105/9 作者:  Wu XQ(吴先前);  Tan QM(谈庆明);  Huang CG(黄晨光) 收藏  |  浏览/下载：34/0  |  提交时间：2013/09/27 Physical properties  Controlling mechanism  Dimensional analysis  Dimensionless parameters  Geometrical scaling  Laser power density  Laser shock processing  Strengthening effect  Surface residual stress   Effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 and stress control 期刊论文  OAI收割 ACTA MECHANICA SINICA, 2012, 卷号: 28, 期号: 5, 页码: 1382-1388 作者:  Li YQ(李玉琼);  Wang HQ;  Wang WY;  Yu ZN;  Liu HS(刘河山) 收藏  |  浏览/下载：40/0  |  提交时间：2013/01/18 Film stress  Stress controlling  Ion-beam assisted deposition  Hartmann-Shack sensor  Thin-Films  Residual-Stress   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：34/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.