机构

• 中国科学院大学 [3]
• 金属研究所 [1]
• 长春光学精密机械与物... [1]

采集方式

• iSwitch采集 [3]
• OAI收割 [2]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2011 [1]
• 2008 [1]
• 2007 [1]
• 2005 [2]

学科主题

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Correlation of mechanical properties in bulk metallic glasses with (27)Al NMR characteristics 期刊论文  OAI收割 Chinese Science Bulletin, 2011, 卷号: 56, 期号: 36, 页码: 3937-3941 M. T. Sandor; L. J. Kecskes; Q. He; J. Xu; Y. Wu 收藏  |  浏览/下载：48/0  |  提交时间：2012/04/13 bulk metallic glass  nuclear magnetic resonance  knight shift  magnetic  susceptibility  mechanical properties  supercooled liquid region  cu amorphous-alloys  electronic-structure  zr  transition  ni  strength   Aim studies on sshx -> hssx (x = f, cl, br, i) reaction 期刊论文  iSwitch采集 Journal of molecular structure-theochem, 2008, 卷号: 851, 期号: 1-3, 页码: 115-120 作者:  Zeng, Yanli;  Li, Xiaoyan;  Zhang, Xueying;  Zheng, Shijun;  Meng, Lingpeng 收藏  |  浏览/下载：50/0  |  提交时间：2019/05/10 Topological analysis of electron density  Reaction pathway  Structure transition region (str)  Structure transition state (sts)   Theoretical studies on sox (x=1-3) formation in the reaction of ch3so radical with o-3 期刊论文  iSwitch采集 Journal of molecular structure-theochem, 2007, 卷号: 847, 期号: 1-3, 页码: 52-58 作者:  Li, Xiaoyan;  Meng, Lingpeng;  Zheng, Shijun 收藏  |  浏览/下载：50/0  |  提交时间：2019/05/10 Ch3so radical  Ch3so2 radical  Topological analysis of electronic density  Structure transition region   Reaction mechanisms and topological studies of electron density on the reaction of ch2sh radical and cl atom 期刊论文  iSwitch采集 Acta chimica sinica, 2005, 卷号: 63, 期号: 4, 页码: 295-300 作者:  Sun, CH;  Zeng, YL;  Meng, LP;  Zheng, SJ 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/10 Radical reaction  Energy transition state  Structure transition state  Structure transition region  Topological analysis of electronic density   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.