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CAS IR Grid
机构
长春光学精密机械与物... [3]
地球化学研究所 [1]
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OAI收割 [4]
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会议论文 [3]
期刊论文 [1]
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2017 [1]
2010 [1]
2006 [1]
2005 [1]
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Genesis Study of the Nano-Micron Sphalerite Exsolution in Chalcopyrite from the Gengzhuang Gold Deposit in China
期刊论文
OAI收割
Journal of Nanoscience & Nanotechnology, 2017, 卷号: 17, 期号: 9, 页码: 6677-6685
作者:
Ren, Yaqun
;
Huang, Fei
;
Li, Yongli
;
Zhu, Jianxi
;
Wan, Quan
;
Yu, Lizhang
;
Zhang, Zhibin
;
Gao, Shang
  |  
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2018/07/09
Chalcopyrite
Exsolution
Gengzhuang Gold Deposit
Sphalerite
Surface Energy Of Crystal
Electric-field-induced effective anchoring energy in nematic liquid crystal (EI CONFERENCE)
会议论文
OAI收割
2010 International Conference on Display and Photonics, July 12, 2010 - July 13, 2010, Nanjing, China
Ye W.
;
Zhang Z.
;
Xing H.
;
Yang G.
;
Chen G.
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2013/03/25
Electric-field-induced effective anchoring energy in nematic liquid crystal is investigated taking surface and flexoelectric polarization into consideration. The analytical expressions of effective anchoring energy for both bottom and upper substrate
containing these two polarizations
are derived. The effective anchoring strength for both bottom and upper substrate is also obtained by means of a systematic method
which is relevant to magnitude of two polarizations and determined by the applied voltage U. Applying the obtained expressions into an original weak anchoring hybrid aligned nematic cell
the effective anchoring strength are determined with the different magnitudes of two polarizations and the different applied voltage U.
Photonic micro and sub-micro structures in LiNbO3 crystals (EI CONFERENCE)
会议论文
OAI收割
ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Wang P.
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2013/03/25
High energy lasers processing of materials is knowing an increasing interest since it not only can make manufacturing faster
cleaner
and more accurate but also because it opens up entirely new technologies and manufacturing methods
that are simply not available by using standard techniques. In this paper
an experimental set-up
based on pulsed KrF excimer Laser
assembled for surface patterning of mono and two-dimensional
(1D-2D)
micro and submicro structures on LiNbO3(LN) crystal
will be described in detail. The apparatus has been used to produce photonic structures in LN
both by patterning of PMMA photoresist
and by direct surface patterning through laser ablation or direct laser writing. The structures and properties of the photonic crystals fabricated by using this apparatus have been investigated
and the preliminary results will be presented.
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE)
会议论文
OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.
;
Lu Y. M.
;
Shen D. Z.
;
Yan J. F.
;
Li B. H.
;
Zhang J. Y.
;
Liu Y. C.
;
Fan X. W.
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that
below 500 C
ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra
ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature
which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown
which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.