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Chinese Academy of Sciences Institutional Repositories Grid
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Genesis Study of the Nano-Micron Sphalerite Exsolution in Chalcopyrite from the Gengzhuang Gold Deposit in China 期刊论文  OAI收割
Journal of Nanoscience & Nanotechnology, 2017, 卷号: 17, 期号: 9, 页码: 6677-6685
作者:  
Ren, Yaqun;  Huang, Fei;  Li, Yongli;  Zhu, Jianxi;  Wan, Quan;  Yu, Lizhang;  Zhang, Zhibin;  Gao, Shang
  |  收藏  |  浏览/下载:47/0  |  提交时间:2018/07/09
Electric-field-induced effective anchoring energy in nematic liquid crystal (EI CONFERENCE) 会议论文  OAI收割
2010 International Conference on Display and Photonics, July 12, 2010 - July 13, 2010, Nanjing, China
Ye W.; Zhang Z.; Xing H.; Yang G.; Chen G.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
Photonic micro and sub-micro structures in LiNbO3 crystals (EI CONFERENCE) 会议论文  OAI收割
ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Wang P.
收藏  |  浏览/下载:21/0  |  提交时间:2013/03/25
High energy lasers processing of materials is knowing an increasing interest since it not only can make manufacturing faster  cleaner  and more accurate but also because it opens up entirely new technologies and manufacturing methods  that are simply not available by using standard techniques. In this paper  an experimental set-up  based on pulsed KrF excimer Laser  assembled for surface patterning of mono and two-dimensional  (1D-2D)  micro and submicro structures on LiNbO3(LN) crystal  will be described in detail. The apparatus has been used to produce photonic structures in LN  both by patterning of PMMA photoresist  and by direct surface patterning through laser ablation or direct laser writing. The structures and properties of the photonic crystals fabricated by using this apparatus have been investigated  and the preliminary results will be presented.  
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:41/0  |  提交时间:2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.