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	Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏 \| 浏览/下载：66/0 \| 提交时间：2013/03/25 Pulsed anodic oxidation technique a new way of forming current blocking layers was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.
	X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文 OAI收割 journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32 Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH 收藏 \| 浏览/下载：76/0 \| 提交时间：2010/08/12 x-ray diffraction strain relaxation GaNxAs1-x/GaAs photoluminescence RHEED MOLECULAR-BEAM EPITAXY TEMPERATURE PULSED OPERATION BAND-GAP ENERGY NITROGEN GAASN GANXAS1-X GAAS1-XNX ALLOYS LASERS LAYERS
	Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy 期刊论文 OAI收割 applied physics letters, 2000, 卷号: 77, 期号: 2, 页码: 214-216 Pan Z; Li LH; Zhang W; Lin YW; Wu RH 收藏 \| 浏览/下载：90/0 \| 提交时间：2010/08/12 TEMPERATURE PULSED OPERATION CHEMICAL-VAPOR-DEPOSITION QUANTUM-WELLS LASER-DIODE TERTIARYBUTYLARSINE GAAS