中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共5条,第1-5条 帮助

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Deciphering the Biophysical Impact of Permafrost Greening on Summer Surface Offset 期刊论文  OAI收割
EARTHS FUTURE, 2024, 卷号: 12, 期号: 6, 页码: e2023EF004077
作者:  
Wang, Jian;  Liu, Desheng
  |  收藏  |  浏览/下载:7/0  |  提交时间:2024/07/12
The thermal regime, including a reversed thermal offset, of arid permafrost sites with variations in vegetation cover density, wudaoliang basin, qinghai-tibet plateau 期刊论文  iSwitch采集
Permafrost and periglacial processes, 2015, 卷号: 26, 期号: 2, 页码: 142-159
作者:  
Lin, Z.;  Burn, C. R.;  Niu, F.;  Luo, J.;  Liu, M.
收藏  |  浏览/下载:149/0  |  提交时间:2019/09/04
Estimation of hourly solar radiation at the surface under cloudless conditions on the Tibetan Plateau using a simple radiation model 期刊论文  OAI收割
ADVANCES IN ATMOSPHERIC SCIENCES, 2012, 卷号: 29, 期号: 4, 页码: 675-689
作者:  
Liang Hong;  Zhang Renhe;  Liu Jingmiao;  Sun Zhian;  Cheng Xinghong
  |  收藏  |  浏览/下载:17/0  |  提交时间:2021/02/02
Symbiosis of marshes and permafrost in Da and Xiao Hinggan Mountains in northeastern China 期刊论文  iSwitch采集
CHINESE GEOGRAPHICAL SCIENCE, 2008, 卷号: 18, 期号: 1, 页码: 62-69
作者:  
Jin Huijun;  Sun Guangyou;  Yu Shaopeng;  Jin Rui;  He Ruixia
收藏  |  浏览/下载:27/0  |  提交时间:2019/10/08
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.