中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
长春光学精密机械与物... [1]
半导体研究所 [1]
采集方式
OAI收割 [2]
内容类型
期刊论文 [2]
发表日期
2019 [1]
2011 [1]
学科主题
光电子学 [1]
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High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
期刊论文
OAI收割
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:
J.-M.Shang
;
J.Feng
;
C.-A.Yang
;
S.-W.Xie
;
Y.Zhang
  |  
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002
作者:
Zhang, Yu
;
Wang, Guowei
;
Tang, Bao
;
Xu, Yingqiang
;
Xu, Yun
  |  
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2012/06/14
Buffer layers
Epitaxial growth
Gallium alloys
Indium antimonides
Molecular beam epitaxy
Molecular beams
Optical waveguides
Optimization
Semiconducting gallium arsenide
Semiconductor quantum wells
Tellurium
Tellurium compounds
Buffer Layers
Epitaxial Growth
Gallium Alloys
Indium Antimonides
Molecular Beam Epitaxy
Molecular Beams
Optical Waveguides
Optimization
Semiconducting Gallium Arsenide
Semiconductor Quantum Wells
Tellurium
Tellurium Compounds