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CAS IR Grid
机构
半导体研究所 [4]
长春光学精密机械与物... [2]
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大连化学物理研究所 [1]
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中国科学院大学 [1]
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期刊论文 [10]
会议论文 [2]
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A tetragonal tungsten bronze-type photocatalyst: Ferro-paraelectric phase transition and photocatalysis
期刊论文
OAI收割
CHINESE JOURNAL OF CATALYSIS, 2016, 卷号: 37, 期号: 8, 页码: 1257-1262
作者:
Fan, Dayong
;
Chong, Ruifeng
;
Fan, Fengtao
;
Wang, Xiuli
;
Li, Can
  |  
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/06/20
Photocatalysis
Ferro-paraelectric Phase Transition
Sr0.7ba0.3nb2o6
Anomalous Photovoltaic Effect
Temperature-dependent Photoluminescence Excitation Spectrum
A tetragonal tungsten bronze-type photocatalyst: ferro-paraelectric phase transition and photocatalysis
期刊论文
iSwitch采集
Chinese journal of catalysis, 2016, 卷号: 37, 期号: 8, 页码: 1257-1262
作者:
Fan, Dayong
;
Chong, Ruifeng
;
Fan, Fengtao
;
Wang, Xiuli
;
Li, Can
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2019/05/09
Photocatalysis
Ferro-paraelectric phase transition
Sr0.7ba0.3nb2o6
Anomalous photovoltaic effect
Temperature-dependent photoluminescence excitation spectrum
ZnGeN2 and ZnGeN2:Mn2+ phosphors: hydrothermal-ammonolysis synthesis, structure and luminescence properties
期刊论文
OAI收割
journal of materials chemistry c, 2015, 卷号: 3, 期号: 36, 页码: 9306-9317
作者:
Shang,Mengmeng
;
Wang,Jing
;
Fan,Jian
;
Lian,Hongzhou
;
Zhang,Yang
收藏
  |  
浏览/下载:74/0
  |  
提交时间:2016/05/12
LIGHT-EMITTING-DIODES
TEMPERATURE-DEPENDENT EMISSION
SOLID-SOLUTION PHOSPHORS
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
YELLOW LUMINESCENCE
WHITE LEDS
PHOTOLUMINESCENCE PROPERTIES
MN2&-ACTIVATED PHOSPHORS
ELECTRONIC STATES
Abnormal temperature dependent photoluminescence of self-assembled inas/gaas surface quantum dots with high areal density
期刊论文
iSwitch采集
Physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 9, 页码: 2455-2459
作者:
Zhou, X. L.
;
Chen, Y. H.
;
Liu, J. Q.
;
Xu, B.
;
Ye, X. L.
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2019/05/12
Quantum dots
Temperature dependent
Photoluminescence
Surface localized centers
Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 9, 页码: 2455-2459
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Liu JQ (Liu J. Q.)
;
Xu B (Xu B.)
;
Ye XL (Ye X. L.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:273/60
  |  
提交时间:2010/09/07
Quantum dots
Temperature dependent
Photoluminescence
Surface localized centers
Raman and excitonic photoluminescence characterizations of ZnO star-shaped nanocrystals
期刊论文
OAI收割
JOURNAL OF LUMINESCENCE, 2007, 卷号: 122, 页码: 415-417
作者:
Li, Chunping
;
Lv, Yuzhen
;
Guo, Lin
;
Xu, Huibin
;
Ai, Xicheng
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/04/09
Zno
Temperature-dependent Photoluminescence
Raman
Exciton
Phonon
Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE)
会议论文
OAI收割
Wei Z. P.
;
Lu Y. M.
;
Shen D. Z.
;
Wu C. X.
;
Zhang Z. Z.
;
Zhao D. X.
;
Zhang J. Y.
;
Fan X. W.
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2013/03/25
A set of ZnO/MgZnO heterostructures with well widths
Lw
varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton
while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness
the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.
Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE)
会议论文
OAI收割
Zhang Y. J.
;
Xu C. S.
;
Liu Y. C.
;
Liu Y. X.
;
Wang G. R.
;
Fan X. W.
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2013/03/25
We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h
a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range
from 80 to 300 K
but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.
Photoluminescence and time-resolved photoluminescence of star-shaped ZnO nanostructures
期刊论文
OAI收割
SOLID STATE COMMUNICATIONS, 2006, 卷号: 139, 期号: 7, 页码: 355-359
作者:
Li, C. P.
;
Guo, L.
;
Wu, Z. Y.
;
Ren, L. R.
;
Ai, X. C.
  |  
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/04/09
Zno
Stimulated Emission
Temperature-dependent Photoluminescence
Time-resolved Photoluminescence
Photoluminescence and time-resolved photoluminescence of star-shaped ZnO nanostructures
期刊论文
OAI收割
SOLID STATE COMMUNICATIONS, 2006, 卷号: 139, 期号: 7, 页码: 355-359
作者:
Li, CP
;
Guo, L
;
Wu ZY(吴自玉)
;
Wu, ZY
;
Ren, LR
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2016/06/27
ZnO
stimulated emission
temperature-dependent photoluminescence
time-resolved photoluminescence