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	Temperature dependence of Raman scattering in single crystal SnSe 期刊论文 OAI收割 VIBRATIONAL SPECTROSCOPY, 2020, 卷号: 107, 页码: 6 作者: Gong, Xiangnan; Wu, Hong; Yang, Dingfeng; Zhang, Bin; Peng, Kunling \| 收藏 \| 浏览/下载：26/0 \| 提交时间：2020/08/24 SnSe single crystal Temperature-dependent raman Laser-power-dependent raman Anharmonic effect
	Effect of 6H-SiC (11(2)over-bar0) substrate on epitaxial graphene revealed by Raman scattering 期刊论文 OAI收割 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 1 Lin, JJ; Guo, LW; Jia, YP; Chen, LL; Lu, W; Huang, J; Chen, XL 收藏 \| 浏览/下载：22/0 \| 提交时间：2014/01/16 epitaxial graphene 6H-SiC (11(2)over-bar0) temperature dependent Raman scattering
	Raman and excitonic photoluminescence characterizations of ZnO star-shaped nanocrystals 期刊论文 OAI收割 JOURNAL OF LUMINESCENCE, 2007, 卷号: 122, 页码: 415-417 作者: Li, Chunping; Lv, Yuzhen; Guo, Lin \| 收藏 \| 浏览/下载：20/0 \| 提交时间：2019/04/09 Zno Temperature-dependent Photoluminescence Raman Exciton Phonon
	Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文 OAI收割 Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range from 80 to 300 K but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.