中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共7条,第1-7条 帮助

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Studies of erosion-deposition of plasma-facing materials due to plasma-wall interactions in EAST tokamak 期刊论文  OAI收割
JOURNAL OF NUCLEAR MATERIALS, 2024, 卷号: 598
作者:  
Imran, Muhammad;  Hu, Zhenhua;  Zheng, Peichao;  Sattar, Harse;  Khan, Muhammad Salman
  |  收藏  |  浏览/下载:9/0  |  提交时间:2024/11/20
A comparative study on the physical properties of natural sedimentary loess and manual filling compacted loess 期刊论文  OAI收割
ENVIRONMENTAL EARTH SCIENCES, 2021, 卷号: 80, 期号: 21, 页码: 17
作者:  
Zhang, Linxin;  Qi, Shengwen;  Yu, Yongtang;  Zhang, Yaguo;  Li, Zhiqing
  |  收藏  |  浏览/下载:34/0  |  提交时间:2022/07/01
An experimental study on characteristics of impact compression of freeze-thawed granite samples under four different states considering moisture content and temperature difference 期刊论文  OAI收割
ENVIRONMENTAL EARTH SCIENCES, 2021, 卷号: 80, 期号: 18, 页码: 12
作者:  
Ke, Bo;  Zhang, Chunyang
  |  收藏  |  浏览/下载:101/0  |  提交时间:2021/10/27
High-throughput sample-to-answer detection of dna/rna in crude samples within functionalized micro-pipette tips 期刊论文  iSwitch采集
Biosensors & bioelectronics, 2016, 卷号: 75, 页码: 28-33
作者:  
Lu, Wenjing;  Wang, Jidong;  Wu, Qiong;  Sun, Jiashu;  Chen, Yiping
收藏  |  浏览/下载:46/0  |  提交时间:2019/04/23
Studies on the chromium concentrations in topsoils and subsoils of two rapidly industrialized cities in the Yangtze River Delta in east China 期刊论文  OAI收割
ENVIRONMENTAL EARTH SCIENCES, 2010, 卷号: 61, 期号: 6, 页码: 1239-1247
作者:  
Wu, Chunfa;  Luo, Yongming;  Huang, Biao;  Zhang, Haibo;  Wang, Huoyan
  |  收藏  |  浏览/下载:29/0  |  提交时间:2011/07/14
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载:27/0  |  提交时间:2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.  
Strength properties of the jointed rock mass medium under dynamic cyclic loading 期刊论文  iSwitch采集
PROGRESS IN NATURAL SCIENCE, 2001, 卷号: 11, 期号: 3, 页码: 197-201
作者:  
Li, N;  Chen, WL;  Zhang, P
收藏  |  浏览/下载:34/0  |  提交时间:2019/10/08