中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共8条,第1-8条 帮助

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Coaxial Thermocouples for Heat Transfer Measurements in Long-Duration High Enthalpy Flows 期刊论文  OAI收割
SENSORS, 2020, 卷号: 20, 期号: 18, 页码: 18
作者:  
Zhang SZ(张仕忠);  Wang Q(汪球);  Li JP(李进平);  Zhang XY(张晓源);  Chen H(陈宏)
  |  收藏  |  浏览/下载:35/0  |  提交时间:2020/11/30
Influence of test model material on the accuracy of transient heat transfer measurements in impulse facilities 期刊论文  OAI收割
EXPERIMENTAL THERMAL AND FLUID SCIENCE, 2019, 卷号: 104, 页码: 59-66
作者:  
Wang Q(汪球);  Olivier H;  Einhoff J;  Li JP(李进平);  Zhao W(赵伟)
  |  收藏  |  浏览/下载:64/0  |  提交时间:2019/05/29
On the response of coaxial surface thermocouples for transient aerodynamic heating measurements 期刊论文  OAI收割
EXPERIMENTAL THERMAL AND FLUID SCIENCE, 2017, 卷号: 86, 页码: 141-148
作者:  
Li JP(李进平);  Chen H(陈宏);  Zhang SZ(张仕忠);  Zhang XY(张晓源);  Yu HR(俞鸿儒)
收藏  |  浏览/下载:30/0  |  提交时间:2017/07/24
A new method of rapid power measurement for MW-scale high-current particle beams 期刊论文  OAI收割
NuclearInstrumentsandMethodsin PhysicsResearch A, 2015
作者:  
Xu YJ(许永建);  Chundong Hu;  Yuanlai Xie;  Zhimin Liu;  Yahong Xie
  |  收藏  |  浏览/下载:22/0  |  提交时间:2022/12/27
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
收藏  |  浏览/下载:33/0  |  提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
The design and implementation of temperature acquisition system based on PXI (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Control Engineering and Communication Technology, ICCECT 2012, December 7, 2012 - December 9, 2012, Shenyang, Liaoning, China
作者:  
Wang J.
收藏  |  浏览/下载:32/0  |  提交时间:2013/03/25
A tunable diode-laser absorption spectroscopy (TDLAS) thermometry for combustion diagnostics 会议论文  OAI收割
15th AIAA International Space Planes and Hypersonic Systems and Technologies Conference, Dayton, OH, United states, April 28, 2008 - May 1, 2008
作者:  
Yu XL(余西龙);  Li F(李飞);  Chen LH(陈立红);  Chang XY(张新宇)
收藏  |  浏览/下载:37/0  |  提交时间:2017/06/01