中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
新疆理化技术研究所 [3]
新疆生态与地理研究所 [1]
采集方式
OAI收割 [4]
内容类型
期刊论文 [4]
发表日期
2018 [2]
2016 [1]
2010 [1]
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Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
期刊论文
OAI收割
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:
Zhang, JX (Zhang, Jin-Xin)[ 1 ]
;
Guo, HX (Guo, Hong-Xia)[ 2,3 ]
;
Pan, XY (Pan, Xiao-Yu)[ 3 ]
;
Guo, Q (Guo, Qi)[ 2 ]
;
Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
  |  
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2018/11/20
Sige Hbt
Synergistic Effect
Single Event Effects
Total Ionizing Dose
Effects of recording time and residue on dose-response by LiMgPO4: Tb, B ceramic disc synthesized via improved sintering process
期刊论文
OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 422, 期号: 5, 页码: 2018-12-17
作者:
Kong, XR (Kong, Xirui)
;
Fu, ZL (Fu, Zhilong)
;
Que, HY (Que, Huiying)
;
Fan, YW (Fan, Yanwei)
;
Chen, ZY (Chen, Zhaoyang)
  |  
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2018/07/20
Limgpo4
Ceramic Disc
Tb
Osl
b
Recording Time
Bleaching Time
Total-ionizing Dose Effects
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
作者:
Zheng, QW (Zheng Qi-Wen)
;
Cui, JW (Cui Jiang-Wei)
;
Wang, HN (Wang Han-Ning)
;
Zhou, H (Zhou Hang)
;
Yu, DZ (Yu De-Zhao)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2016/12/12
total ionizing dose effects
deep sub-micron
metal oxide semiconductor field effect transistor
static random access memory
Total ionizing dose effects and annealing behavior for domestic VDMOS devices
期刊论文
OAI收割
Journal of Semiconductors, 2010, 卷号: 31, 期号: 4
Gao
;
Yu
;
Ren
;
Liu
;
Wang
;
Sun
;
Cui
;
Bo1
;
Xuefeng1
;
Diyuan1
;
Gang3
;
Yiyuan1
;
Jing1
;
Jiangwei1
;
2
;
2
;
2
;
2
;
2
;
2
;
4
;
4
;
4
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2011/08/19
Drain current - Electric breakdown - Experiments - Field effect transistors - Ionizing radiation - Irradiation - Radiation effects - Threshold voltage - Annealing behavior - Annealing time - Bias conditions - Breakdown voltage - Drain bias voltage - Electrical parameter - N-channel - On-state resistance - Preirradiation - Total dose - Total dose effect - Total ionizing dose effects - VDMOS device - VDMOS devices