机构

• 长春光学精密机械与物... [1]
• 武汉植物园 [1]
• 合肥物质科学研究院 [1]
• 植物研究所 [1]
• 兰州化学物理研究所 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2016 [2]
• 2010 [1]
• 2007 [1]
• 2006 [1]

学科主题

• Horticultu... [1]
• 材料科学与物理化学 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 UV-C-Induced alleviation of transcriptional gene silencing through plant-plant communication: Key roles of jasmonic acid and salicylic acid pathways 期刊论文  OAI收割 MUTATION RESEARCH-FUNDAMENTAL AND MOLECULAR MECHANISMS OF MUTAGENESIS, 2016, 卷号: 790, 期号: 无, 页码: 56-67 作者:  Xu, Wei;  Wang, Ting;  Xu, Shaoxin;  Li, Fanghua;  Deng, Chenguang   |  收藏  |  浏览/下载：33/0  |  提交时间：2017/11/21 Uv-c Irradiation  Interplant Communication  Transcriptional Gene Silencing  Jasmonic Acid  Salicylic Acid   Resveratrol Synthesis under Natural Conditions and after Ultraviolet-C Irradiation in Grape Leaves at Different Leaf Developmental Stages 期刊论文  OAI收割 HORTSCIENCE, 2016, 卷号: 51, 期号: 6, 页码: 727-731 作者:  Wang, Junfang;  Sun, Yuxia;  Wang, Hengzhen;  Guan, Xueqiang;  Wang, Lijun   |  收藏  |  浏览/下载：16/0  |  提交时间：2022/07/08 UV-C irradiation  grape leaf  development  resveratrol   Effect of grape genotype and tissue type on callus growth and production of resveratrols and their piceids after UV-C irradiation 期刊论文  OAI收割 FOOD CHEMISTRY, 2010, 卷号: 122, 期号: 3, 页码: 475-481 作者:  Liu, Wen;  Liu, Chunyan;  Yang, Chunxiang;  Wang, Lijun;  Li, Shaohua   |  收藏  |  浏览/下载：29/0  |  提交时间：2017/04/13 Stilbene  Callus  UV-C irradiation  Genotype  Tissue type   Ultraviolet irradiation induced changes in the surface of phenolphthalein poly(ether sulfone) film 期刊论文  OAI收割 Applied Surface Science, 2007, 卷号: 253, 页码: 4550-4553 作者:  Wang QH(王齐华) 收藏  |  浏览/下载：26/0  |  提交时间：2013/11/01 Phenolphthalein poly(ether sulfone) (PES-C)  Ultraviolet (UV) irradiation  Surface characteristic  Photooxidation   Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏  |  浏览/下载：32/0  |  提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.