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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共15条,第1-10条 帮助

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Photometric investigation and orbital period analyses of the W UMa binaries FP Lyn, FV CVn and V354 UMa 期刊论文  OAI收割
RESEARCH IN ASTRONOMY AND ASTROPHYSICS, 2019, 卷号: 19, 期号: 7
作者:  
Michel Raul;  Xia QiQi;  Higuera Jesus
  |  收藏  |  浏览/下载:20/0  |  提交时间:2021/12/06
Correction of Flow Curves and Constitutive Modelling of a Ti-6Al-4V Alloy 期刊论文  OAI收割
METALS, 2018, 卷号: 8, 期号: 4, 页码: -
作者:  
Hu, M;  Dong, LM;  Zhang, ZG;  Lei, XF;  Yang, R
  |  收藏  |  浏览/下载:25/0  |  提交时间:2018/12/25
Correction of Flow Curves and Constitutive Modelling of a Ti-6Al-4V Alloy 期刊论文  OAI收割
METALS, 2018, 卷号: 8, 期号: 4, 页码: 15
作者:  
Hu, Ming;  Dong, Limin;  Zhang, Zhigiang;  Lei, Xiaofei;  Yang, Rui
  |  收藏  |  浏览/下载:16/0  |  提交时间:2021/02/02
High open-circuit voltage polymer/polymer blend solar cells with a polyfluorene copolymer as the electron acceptor 期刊论文  OAI收割
rsc advances, 2014, 卷号: 4, 期号: 24, 页码: 12579-12585
Yang, Qingqing; Song, Haiyang; Gao, Bingrong; Wang,Yan; Fu,Yingying; Yang,Junwei; Xie,Zhiyuan; Wang,Lixiang
收藏  |  浏览/下载:37/0  |  提交时间:2015/10/19
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
收藏  |  浏览/下载:34/0  |  提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Enhanced photovoltaic properties of solar cell based on ITO/PEDOT:PSS/ZnO:P3HT/Ag by an annealing treatment SCI/SSCI论文  OAI收割
2013
Wang X. M.; Yu C. Q.; Wu J. X.
收藏  |  浏览/下载:24/0  |  提交时间:2014/12/24
Data processing method of multi-position strap-down north seeking system based on SVD (EI CONFERENCE) 会议论文  OAI收割
2011 International Conference on Mechatronic Science, Electric Engineering and Computer, MEC 2011, August 19, 2011 - August 22, 2011, Jilin, China
Shen C.-W.; Liu C.; Yu S.-B.; Wang Z.-Q.; Li J.-R.
收藏  |  浏览/下载:36/0  |  提交时间:2013/03/25
Current-voltage characteristics of individual conducting polymer nanotubes and nanowires 期刊论文  OAI收割
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 6, 页码: 2514-2522
作者:  
Long Yun-Ze;  Yin Zhi-Hua;  Li Meng-Meng;  Gu Chang-Zhi;  Duvail Jean-Luc
  |  收藏  |  浏览/下载:24/0  |  提交时间:2019/04/09
Dynamic p-i and p-v curves for semiconductor lasers and modulators 期刊论文  iSwitch采集
Journal of lightwave technology, 2008, 卷号: 26, 期号: 17-20, 页码: 3369-3375
作者:  
Zhu, Ning Hua;  Hasen, Qi Qi Ge;  Zhang, Hong Guang;  Wen, Ji Min;  Xie, Liang
收藏  |  浏览/下载:38/0  |  提交时间:2019/05/12
Dynamic P-I and P-V Curves for Semiconductor Lasers and Modulators 期刊论文  OAI收割
journal of lightwave technology, 2008, 卷号: 26, 期号: 17-20, 页码: 3369-3375
Zhu NH; Hasen QQG; Zhang HG; Wen JM; Xie L
收藏  |  浏览/下载:218/51  |  提交时间:2010/03/08