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	Understanding crystal structure roles towards developing high-performance V-free BCC hydrogen storage alloys 期刊论文 OAI收割 INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2022, 卷号: 47, 期号: 60, 页码: 25335-25346 作者: Hu, Huazhou; Ma, Chuanming; Zhou, Lu; Xiao, Houqun \| 收藏 \| 浏览/下载：32/0 \| 提交时间：2023/02/24 Hydrogen storage alloys V-free Hydrogen storage mechanisms Microstructures Rapid cooling
	Simple O-2 Plasma-Processed V2O5 as an Anode Buffer Layer for High-Performance Polymer Solar Cells 期刊论文 OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2015, 卷号: 7, 期号: 14, 页码: 7613-7618 作者: Bao, Xichang 收藏 \| 浏览/下载：36/0 \| 提交时间：2015/11/02 efficient polymer solar cells O-2 plasma processing V2O5 anode buffer layer annealing-free
	How to split a G-quadruplex for DNA detection: new insight into the formation of DNA split G-quadruplex 期刊论文 OAI收割 chemical science, 2015, 卷号: 6, 期号: 8, 页码: 4822-4827 作者: 收藏 \| 浏览/下载：24/0 \| 提交时间：2016/05/03 STRAND DISPLACEMENT LABEL-FREE POTASSIUM-ION LOGIC-CIRCUIT JAK2 V617F DNAZYME PROBES IDENTIFICATION ACID NANOCLUSTERS
	Recent advances in synthesis, physical properties and applications of conducting polymer nanotubes and nanofibers 期刊论文 OAI收割 PROGRESS IN POLYMER SCIENCE, 2011, 卷号: 36, 期号: 10, 页码: 1415 Long, YZ; Li, MM; Gu, CZ; Wan, MX; Duvail, JL; Liu, ZW; Fan, ZY 收藏 \| 浏览/下载：32/0 \| 提交时间：2013/09/24 CURRENT-VOLTAGE CHARACTERISTICS LIGHT-EMITTING-DIODES ASSEMBLED POLYANILINE NANOSTRUCTURES ATOMIC-FORCE MICROSCOPY TEMPLATE-FREE METHOD I-V CHARACTERISTICS ELECTRICAL-CONDUCTIVITY POLYPYRROLE NANOTUBE CHARGE-TRANSPORT LOW-TEMPERATURE
	Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文 OAI收割 Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W. 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 A set of ZnO/MgZnO heterostructures with well widths Lw varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.
	Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation (EI CONFERENCE) 会议论文 OAI收割 Lu Y. M.; Liang H. W.; Shen D. Z.; Zhang Z. Z.; Zhang J. Y.; Zhao D. X.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：13/0 \| 提交时间：2013/03/25 In this paper highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (60 kW/cm2) PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2 a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-E x) scattering process from two ground state excitons where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2 3 4.... Under excitation density of 300 kW/cm 2 the stimulated emission originating from Ex-E x scattering is obtained. When the excitation density is above 580 kW/cm2 the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density. 2006 Elsevier B.V. All rights reserved.
	Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文 OAI收割 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration the size of dots becomes larger and the density decreases which is explained by virtue of the surface free energy.
	Study on optical parts of MOEMS optical switch with low insertion loss (EI CONFERENCE) 会议论文 OAI收割 MEMS/MOEMS Technologies and Applications II, November 10, 2004 - November 12, 2004, Beijing, China 作者: Wang W.; Wang L.; Wang L.; Wang L.; Chen W. 收藏 \| 浏览/下载：32/0 \| 提交时间：2013/03/25 We study insertion losses of optical switch when the laser beam is propagating during the free space between two single mode fibers (SMFs) and the related assemblage challenges Then a new packaging structure is developed for the hybrid-integration of free-space MOEMS (micro-opto-electro-mechanical systems) chip with a silicon micromachined submount to improve alignment accuracy. The submount is designed to accommodate various free-space MOEMS chips with minimal active optical alignment thus reducing the packaging cost. The silicon submount has a central recess to place the MOEMS chip in sixteen V-grooves for optical fibers and micropits for micro ball lenses all bulk micromachined at the same time by a single anisotropic wet etching step. A corner compensation technique is employed to prevent erosion of the convex corners where different geometries meet. Through this assembling method the fiber micro ball lens can be aligned preciously thus reduced lateral and angular misalignment between them. Then total insertion losses can be decreased.