机构

• 长春光学精密机械与物... [4]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [5]

内容类型

• 会议论文 [3]
• 期刊论文 [2]

发表日期

• 2022 [1]
• 2019 [1]
• 2018 [1]
• 2005 [2]

学科主题

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Use of electrochemistry in mini-/micro-LEDs and VCSELs 会议论文  OAI收割 Virtual, Online, 2022-02-20 作者:  Kang, Jin-Ho;  Elafandy, Rami;  Li, Bingjun;  Song, Jie;  Han, Jung   |  收藏  |  浏览/下载：26/0  |  提交时间：2022/07/14 EC etching  nanoporous GaN  miniLED  microLED  RGB array  DBR  VCSEL  blue laser   VCSEL array thermal-distribution optimized by mesas rearrangement 期刊论文  OAI收割 Optik, 2019, 卷号: 186, 页码: 443-448 作者:  Y.Y.Liu;  Y.W.Huang;  C.Y.Zhong;  X.Zhang;  J.W.Zhang   |  收藏  |  浏览/下载：57/0  |  提交时间：2020/08/24 VCSEL array,Thermal optimization,Traversal algorithm,Thermal,cross-talk factor,surface-emitting laser,Optics   Low Thermal Crosstalk 808-nm VCSEL Arrays With Nonlinear Mesa Configuration 期刊论文  OAI收割 IEEE PHOTONICS JOURNAL, 2018, 卷号: 10, 期号: 6, 页码: 8 作者:  Wang, Lijun;  Ning, Yongqiang;  Hofmann, Werner;  Zhang, Xing;  Zhong, Chuyu   |  收藏  |  浏览/下载：51/0  |  提交时间：2019/08/26 VCSEL array  mesa distribution  optimization algorithm  thermal stability   High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.   High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Sun Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA  and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.