机构

• 物理研究所 [1]
• 长春光学精密机械与物... [1]
• 青岛生物能源与过程研... [1]
• 烟台海岸带研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2018 [1]
• 2014 [1]
• 2007 [1]
• 2004 [1]

学科主题

• 生物材料::先进功能... [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Portable microfluidic chip electrophoresis device with integrated Pt electrodes for the analysis of AgNPs 期刊论文  OAI收割 MICRO & NANO LETTERS, 2018, 卷号: 13, 期号: 3, 页码: 302-305 作者:  Han, Haitao;  Zheng, Zhaoxia;  Pan, Dawei   |  收藏  |  浏览/下载：48/0  |  提交时间：2018/04/20 Microfluidics  Lab-on-a-chip  Platinum  Microelectrodes  Nanoparticles  Thin Films  Voltammetry (Chemical Analysis)  Electrophoresis  Oxidation  Portable Instruments  Portable Microfluidic Chip Electrophoresis Device  Integrated Platinum Thin Film Electrodes  Agnps Analysis  Su-8-pyrex Microfluidic Chip  Electrophoresis Instrument  Reusable Holder  Electrochemical Oxidation Behaviours  Lab-on-a-chip Platform  Cyclic Voltammetry  Running Buffer  Separation Voltage  Detection Potential  Microfluidic Platform  Silver Nanoparticle Analysis  Voltage 0  2 v To 0  4 v  Pt  Ag   Benzo[1,2-b:4,5-b′]dithiophene and benzotriazole based small molecule for solution-processed organic solar cells 期刊论文  OAI收割 Organic Electronics, 2014, 卷号: 15, 期号: 2, 页码: 405-413 Chen, Y.; Du, Z.; Chen, W.; Liu, Q.; Sun, L.; Sun, M.; Yang, R. 收藏  |  浏览/下载：36/0  |  提交时间：2014/03/25 Small molecule  Solution-processed  High open-circuit voltage  Organic solar cells  Benzo[1,2-b:4,5-b0]dithiophene  Benzotriazole   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.   Synthesis and electrochemical performance of spinel LiMn2-x-yNixCryO4 as 5-V cathode materials for lithium ion batteries 期刊论文  OAI收割 JOURNAL OF POWER SOURCES, 2004, 卷号: 132, 期号: 1-2, 页码: 161 Sun, Y; Wang, Z; Huang, XJ; Chen, LQ 收藏  |  浏览/下载：29/0  |  提交时间：2013/09/24 LICRYMN2-YO4 0-LESS-THAN-OR-EQUAL-TO-Y-LESS-THAN-OR-EQUAL-TO-1 COMPOUNDS  POSITIVE-ELECTRODE MATERIALS  SUPERFICIAL PROCESSES  CR CONTENT  LIMN2O4  VOLTAGE  CELLS  BEHAVIOR  METAL  BULK