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Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文  OAI收割
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China
作者:  
Zhang J.;  Li B.;  Li B.;  Li B.;  Zhao Y.
收藏  |  浏览/下载:22/0  |  提交时间:2013/03/25
In recent years  ZnMgO semiconductor alloys  with a direct bandgap tunable between 3.37 eV and 7.8 eV  become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper  we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m  5 m and 10 m  respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current  spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch  the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore  the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns  170 ns and 230 ns for the devices with different finger pitches of 2 m  5 m and 10 m  respectively..  
Tunable ultraviolet laser source from a frequency doubled alexandrite laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Shuhang L.; Jingjiao L.; Lijun W.
收藏  |  浏览/下载:25/0  |  提交时间:2013/03/25
宽调谐、窄线宽中红外PPMgLN晶体双共振光学参量振荡技术 学位论文  OAI收割
作者:  
董怡静
  |  收藏  |  浏览/下载:29/0  |  提交时间:2018/12/26