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	Protein A for human IgG oriented immobilization on silicon surface for an imaging ellipsometry biosensor (EI CONFERENCE) 会议论文 OAI收割 31st Annual International Conference of the IEEE Engineering in Medicine and Biology Society: Engineering the Future of Biomedicine, EMBC 2009, September 2, 2009 - September 6, 2009, Minneapolis, MN, United states 作者: Chen B.; Chen B. 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/03/25 Imaging ellipsometry biosensor was developed on the basement of imaging ellipsometry for thin-film and surface characterization. Using protein A to immobilize Human IgG on silicon surface for the imaging ellipsometry biosensor immunoassay was studied. As a result The Human IgG immobilized on silicon surface by protein A bound much more polyclonal antibody than that on hydrophobic surface directly which indicated that protein A could be used to immobilize Human IgG molecules in a highly oriented manner and Human IgG molecule could maintain its native configuration well on the silicon surface. Furthermore the absorption quantity of Protein A affecting on interaction of Human IgG and antibody molecules was investigated. The surface concentration of Human IgG and antibody molecules was enhanced as well as the increasing of the absorption quantity of Protein A but there are no obvious increase when the ratio of surface concentration of Protein A layer to that of saturated adsorption is larger than 80%. However even decrease slightly. 2009 IEEE.
	Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者: Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.
	Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/03/25 In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.
	Study on the spectrum response characteristic based on the wide type bacteriorhodopsin film 期刊论文 OAI收割 SPECTROSCOPY AND SPECTRAL ANALYSIS, 2004, 卷号: 24, 期号: 8, 页码: 911-913 作者: Yang, WZ; Hou, X; Chen, F; Feng, XQ; Yang, Q \| 收藏 \| 浏览/下载：29/0 \| 提交时间：2019/04/09 Bacteriorhodopsin Molecule Film Spectrum Response Absorption Increasing
	Study on the spectrum response characteristic based on the wide type bacteriorhodopsin film 期刊论文 OAI收割 spectroscopy and spectral analysis, 2004, 卷号: 24, 期号: 8, 页码: 911-913 作者: Yang, WZ; Hou, X; Chen, F; Feng, XQ; Yang, Q 收藏 \| 浏览/下载：25/0 \| 提交时间：2015/07/29 bacteriorhodopsin molecule film spectrum response absorption increasing