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	Analysis and improvement on the stability of satellite laser ranging system 期刊论文 OAI收割 JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 卷号: 38, 期号: 4, 页码: 479-+ 作者: Wu Zhi-Bo; Deng Hua-Rong; Zhang Hai-Feng; Tang Kai; Long Ming-Liang \| 收藏 \| 浏览/下载：102/0 \| 提交时间：2019/10/21 satellite laser ranging range bias long-term stability short-term stability normal point precision
	A feasible method for the fabrication of VAlTiCrSi amorphous high entropy alloy film with outstanding anti-corrosion property 期刊论文 OAI收割 APPLIED SURFACE SCIENCE, 2019, 卷号: 483, 页码: 870-874 作者: Zheng, Shujing; Cai, Zhaobing; Pu, Jibin; Zeng, Chun; Chen, Shengyu \| 收藏 \| 浏览/下载：51/0 \| 提交时间：2019/12/18 SOLID-SOLUTION PHASE MICROSTRUCTURE CORROSION STABILITY SUBSTRATE BEHAVIOR ELEMENTS BIAS
	Analysis and improvement on the stability of satellite laser ranging system 期刊论文 OAI收割 JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 卷号: 38, 期号: 4, 页码: 479 作者: \| 收藏 \| 浏览/下载：67/0 \| 提交时间：2021/12/06 satellite laser ranging range bias long-term stability short-term stability normal point precision
	High-temperature thermal stability of nanocrystalline Cr2O3 films deposited on silicon wafers by arc ion plating 期刊论文 OAI收割 Surface & Coatings Technology, 2013, 卷号: 228, 页码: 140-147 T. G. Wang; Y. M. Liu; H. Sina; C. M. Shi; S. Iyengar; S. Melin; K. H. Kim 收藏 \| 浏览/下载：41/0 \| 提交时间：2013/12/24 Cr2O3 film Arc ion plating Bias voltage Thermal stability Crack area percentage Grain size fatigue crack initiation chromium-oxide coatings p/m super-alloys thin-films mechanical-properties vapor-deposition wear-resistance crn coatings oxidation microstructure
	Distribution of gyroscope accuracy parameters for E-O stabilization platform (EI CONFERENCE) 会议论文 OAI收割 2011 International Conference on Electric Information and Control Engineering, ICEICE 2011, April 15, 2011 - April 17, 2011, Wuhan, China 作者: Zhang X.; Zhang X.; Zhang X.; Jiang H. 收藏 \| 浏览/下载：53/0 \| 提交时间：2013/03/25 E-O stabilization platform performance is partly decided by gyroscope precision so it is important to choose a gyroscope with proper accuracy for an E-O stabilization platform. Based on the method of using a gyroscope in practice gyroscope error model is established. With the gyroscope error model gyroscope accuracy parameters that is bias repeatability bias stability scale factor scale factor nonlinearity output noise and bandwidth are separately analyzed. According to the concretely required performance indices for an E-O platform means of distribution of gyroscope accuracy parameters is proposed. A MEMS gyroscope is tested to get the parameters. Bias stability of the gyroscope is 0.08 /s while the bandwidth is 60 Hz. Output noise both at zero input and at nonzero input is analyzed by means of PSD to get the result that nonzero output noise is higher than zero output noise. Frequency response result of the gyroscope is dealt by means of correlation analysis. With all the tested result and the method of distribution of gyroscope accuracy parameters it is clear that how the gyroscope errors works in an E-O servo system. The principle of distribution of gyroscope accuracy parameters is helpful for choosing appropriate gyroscope for an E-O platform. 2011 IEEE.
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：62/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.