机构

• 物理研究所 [1]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [2]

内容类型

• 会议论文 [1]
• 期刊论文 [1]

发表日期

• 2014 [1]
• 2007 [1]

学科主题

筛选

浏览/检索结果: 共2条，第1-2条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序作者升序作者降序题名升序题名降序发表日期升序发表日期降序 Enhancement-mode ZnO/Mg0.5Zn0.5O HFET on Si 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 卷号: 47, 期号: 25 Ye, DQ; Mei, ZX; Liang, HL; Li, JQ; Hou, YN; Gu, CZ; Azarov, A; Kuznetsov, A; Hong, WC; Lu, YC; Du, XL 收藏  |  浏览/下载：51/0  |  提交时间：2015/04/14 enhancement  ZnO/MgZnO  HFET  bottom-gate   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：44/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.