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• OAI收割 [10]

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• 期刊论文 [8]
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浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Characterization of Imaging System for Satellite-Borne Polarization Camera Based on Scientific Grade CCD 期刊论文  OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022 作者:  Yao, Pingping;  Lu, Meina;  Xu, ZhiLong;  Tu, Bihai;  Sun, Liang   |  收藏  |  浏览/下载：45/0  |  提交时间：2022/12/23 Charge coupled devices  Imaging  Timing  Clocks  Signal to noise ratio  Pins  Dynamic range  Charge-coupled device (CCD) imaging  cloud and aerosol polarization camera (CAPC)  frame transfer  instrumentation  linearity  satellite sensor  signal-to-noise ratio (SNR)   Design of high-sensitivity EMCCD navigation camera 期刊论文  OAI收割 Guangxue Jingmi Gongcheng/Optics and Precision Engineering, 2018, 卷号: 26, 期号: 12, 页码: 3019-3027 作者:  He, Jia-Wei;  He, Xin;  Wei, Zhong-Hui;  Mu, Zhi-Ya;  Li, Fang-Biao   |  收藏  |  浏览/下载：31/0  |  提交时间：2019/09/17 Signal to noise ratio  CCD cameras  Charge coupled devices  Data handling  Design  Digital storage  Interplanetary flight  Navigation  Space research   Design of imaging system of cloud and aerosol polarization imager with high signal-to-noise ratio 期刊论文  OAI收割 Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 11 作者:  Li, Shuai;  Xu, Shuyan;  Liu, Dongbin;  Zhang, Hang   |  收藏  |  浏览/下载：12/0  |  提交时间：2019/09/17 Signal to noise ratio  Aerosols  Calibration  Charge coupled devices  Design  Imaging systems  Infrared detectors  Polarization  Remote sensing  Space optics  Spectrometers   System Signal-to-Noise Ratio Analysis of Hyperspectral Imaging Chain Model Based on Electron Multiplication 期刊论文  OAI收割 Guangxue Xuebao/Acta Optica Sinica, 2018, 卷号: 38, 期号: 11 作者:  Yu, Da;  Liu, Jinguo;  He, Xin;  He, Jiawei;  Chen, Jiayu   |  收藏  |  浏览/下载：22/0  |  提交时间：2019/09/17 Signal to noise ratio  Atmospheric radiation  Charge coupled devices  Detectors  Electrons  Hyperspectral imaging  Light transmission  Optical systems  Reflection  Spectroscopic analysis  Spectroscopy   Measurement of the ratio of C3+ and O4+ ions produced by ECRIS to prepare a laser cooling experiment at storage rings 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2014, 卷号: 764, 页码: 232-235 作者:  Wang, H. B.;  Zhu, X. L.;  Wen, W. Q.;  Ma, X.;  Li, J. Y.   |  收藏  |  浏览/下载：38/0  |  提交时间：2018/07/05 C3++ Ratio Of Equal Mass-to-charge Beam  Ecris  Laser Cooling Experiment  Reaction Microscope   EAF steelmaking process with increasing hot metal charging ratio and improving slagging regime 期刊论文  OAI收割 INTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS, 2009, 卷号: 16, 期号: 4, 页码: 375-382 作者:  Duan, Jian-ping;  Zhang, Yong-liang;  Yang, Xue-min 收藏  |  浏览/下载：34/0  |  提交时间：2013/12/06 electric arc furnace (EAF)  charge ratio  slagging  refining slags  lime   Did the 2000 July 14 solar flare accelerate protons to >= 40 GeV? 期刊论文  OAI收割 ASTROPARTICLE PHYSICS, 2009, 卷号: 31, 期号: 2, 页码: #REF! 作者:  Wang RG(王瑞光);  Wang, RG 收藏  |  浏览/下载：18/0  |  提交时间：2016/04/12 Solar flares  Solar energetic protons  Ground level enhancement  Muon enhancements  Muon charge ratio   Solitary kinetic Alfven waves in dusty plasmas 期刊论文  OAI收割 PHYSICS OF PLASMAS, 2008, 卷号: 15, 期号: 8, 页码: 083703 作者:  Li, Yang-fang;  Wu, D. J.;  Morfill, G. E. 收藏  |  浏览/下载：30/0  |  提交时间：2011/12/29 Solitary kinetic Alfven waves in dusty plasmas are studied by Considering the dust charge variation. The effect of the dust charge-to-mass ratio on the soliton solution is discussed. The Sagdeev potential is derived analytically with constant dust charge and then calculated numerically by taking the dust charge variation into account. We show that the dust charge-to-mass ratio plays an important role in the soliton properties. The soliton solutions are comprised of two branches. One branch is sub-Alfvenic and the soliton velocity is obviously smaller than the Alfven speed. The other branch is super-Alfvenic and the soliton velocity is very close to or greater than the Alfven speed. Both compressive and rarefactive solitons can exist. For the sub-Alfvenic branch  the rarefactive soliton is bell-shaped and it is much narrower than the compressive one. However  for the super-Alfvenic branch  the compressive soliton is bell-shaped and narrower  and the rarefactive one is broadened. When the charge-to-mass ratio of the dust grains is sufficiently high  the width of the rarefactive soliton  in the super-Alfvenic branch  will broaden extremely and a electron depletion will be observed. It is also shown that the bell-shaped soliton can transition to a cusped structure when the velocity is sufficiently high. (C) 2008 American Institute of Physics.   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.   An LCoS microdisplay with new frame buffer pixel circuits (EI CONFERENCE) 会议论文  OAI收割 Second Americas Display Engineering and Applications Conference, ADEAC 2005, October 25, 2005 - October 27, 2005, Portland, OR, United states Song Y.; Ling Z. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 In this paper we proposed novel frame buffer pixel circuits for LCoS microdisplays. The new pixel circuits were simulated and compared with others by SPICE. They can decrease the leakage current by minimizing the amount of transistors connecting with the pixel electrode in the voltage-holding period. And the PMOS charge-clear transistor is introduced firstly to simplify Interconnects of active matrix silicon backplane. The new pixel circuits have the advantages of high resistance to EMI  high voltage holding ratio under high Illumination and high temperature variance  less flick  and simple Interconnects.