机构

• 高能物理研究所 [2]
• 长春光学精密机械与物... [1]
• 上海应用物理研究所 [1]
• 重庆绿色智能技术研究... [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [5]
• 会议论文 [1]

发表日期

• 2020 [1]
• 2019 [1]
• 2005 [1]
• 2002 [1]
• 2000 [2]

学科主题

• Mathematic... [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Directional massless Dirac fermions in a layered van der Waals material with one-dimensional long-range order 期刊论文  OAI收割 NATURE MATERIALS, 2020, 卷号: 19, 期号: 1, 页码: 27- 作者:  Yang, TY;  Wan, Q;  Yan, DY;  Zhu, Z;  Wang, ZW   |  收藏  |  浏览/下载：38/0  |  提交时间：2021/09/06 ELECTRONIC BAND-STRUCTURE  MONOLAYER  SUPERCONDUCTIVITY  FERROMAGNETISM  CONDUCTION  DISCOVERY   Thermoelectric study of Zn-doped n-type AgIn5Se8: Hopping and band electrical conduction along with low lattice thermal conduction in diamond-like structure 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 805, 页码: 444-453 作者:  Shen, Xingchen;  Wang, Guiwen;  Li, Shulong;  Yang, Chun-Chuen;  Tan, Huan   |  收藏  |  浏览/下载：83/0  |  提交时间：2019/12/03 n-type  Diamond-like structure  Lattice dynamics  Variable hopping conduction  Band conduction  Thermoelectric   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.   Longitudinal spin transport in diluted magnetic semiconductor superlattices: The effect of the giant Zeeman splitting 期刊论文  OAI收割 physical review b, 2002, 卷号: 65, 期号: 15, 页码: art.no.155211 Chang K; Xia JB; Peeters FM 收藏  |  浏览/下载：118/1  |  提交时间：2010/08/12 ENVELOPE-FUNCTION APPROXIMATION  QUANTUM-WELLS  CONDUCTION ELECTRONS  BAND-STRUCTURE  SUPER-LATTICE  INJECTION  MAGNETORESISTANCE  HETEROSTRUCTURE  SCATTERING   Synchrotron radiation photoemission spectrum study on K3C60 film 期刊论文  OAI收割 SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2000, 卷号: 43, 期号: 11, 页码: 1189-1194 作者:  Li, HN;  Xu, YB;  Bao, SN;  Li, HY;  He, PM 收藏  |  浏览/下载：24/0  |  提交时间：2016/06/29 K3C60  single crystal film  SR-ARPES  conduction band structure   Synchrotron radiation photoemission spectrum study on K_3C_(60) film 期刊论文  OAI收割 Science in China;Ser.A, 2000, 期号: 11, 页码: 1189-1194 作者:  Li HN(李宏年);  Xu YB(徐亚伯);  Bao SN(鲍世宁);  Li HY(李海洋);  He PM(何丕模) 收藏  |  浏览/下载：21/0  |  提交时间：2015/12/25 K_3C_(60)single crystal film  SR-ARPES  conduction band structure.