中国科学院机构知识库网格系统: 检索

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	强流离子源灯丝电源设计与分析期刊论文 OAI收割核聚变与等离子体物理, 2023, 卷号: 43 作者: 潘军军; 刘智民; 蒋才超; 刘胜; 陈世勇 \| 收藏 \| 浏览/下载：11/0 \| 提交时间：2023/11/10 Neutral beam injector High-current ion source Filament power supply Isolation transformer Dual inverse star 中性束注入器强流离子源灯丝电源隔离变压器双反星形
	Applied Superconductivity and Electromagnetic Devices-Large-Scale Applications and Availability 期刊论文 OAI收割 IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2021, 卷号: 31, 期号: 8, 页码: 17 作者: Zhou, Qian; Wu, Wei; Mei, Enming; Sun, Liangting; Zhang, Guoshu \| 收藏 \| 浏览/下载：79/0 \| 提交时间：2021/12/13 Superconducting magnets Physics Synchrotron radiation Superconducting photodetectors Superconductivity Storage rings Structural beams Applied superconductivity electromagnetic devices superconducting magnets low T_c superconductors (LTSs) Nb_3Sn high T_c superconductors (HTSs) HTS 2G wires ReBCO YBCO thin film Bi2212 CICC HTS electromagnetic characteristics critical current density modification by ion-beam bombardment PISM ITER tokamaks heavy ion accelerator ECR ion source sextuple dipole multiplet china Astro-Torus No 1 (CAT-1) magnetic confinement device dipole field floating coil accelerator mass spectrometry isotope mass spectrometry
	Operation of the csns penning surface h- ion source 期刊论文 iSwitch采集 Science china-physics mechanics & astronomy, 2011, 卷号: 54, 页码: S245-s248 作者: Wu XiaoBing; Ouyang HuaFu; Chi YunLong; He Wei 收藏 \| 浏览/下载：27/0 \| 提交时间：2019/04/23 Csns Penning h- ion source Discharge chamber Current Emittance
	CSNS H- ion source test stand 期刊论文 OAI收割 CHINESE PHYSICS C, 2011, 卷号: 35, 期号: 7, 页码: 679-683 作者: Wu XB(吴小兵); 欧阳华甫; Chi YL(池云龙); He W(何伟); 黄涛(加) 收藏 \| 浏览/下载：75/0 \| 提交时间：2016/06/28 H- ion source energy current emittance
	CSNS H~- ion source test stand 期刊论文 OAI收割中国物理C, 2011, 期号: 7, 页码: 679-683 作者: Wu XB(吴小兵); 欧阳华甫; Chi YL(池云龙); He W(何伟); 黄涛（加）收藏 \| 浏览/下载：24/0 \| 提交时间：2015/12/14 H~- ion source energy current emittance
	The novel facet coating technology for 808nm semiconductor laser (EI CONFERENCE) 会议论文 OAI收割 2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, July 28, 2010 - August 1, 2010, Harbin, China 作者: Liu Y.; Qin L.; Li Z.; Li Z.; Wang L. 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/03/25 A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology semiconductor laser are cleaved in the air and the surface oxide layer is removed with a low energy ion source flowed immediately by coating the facet with thin ZnSe layer of 20 nm. The function of this layer is to protect semiconductor laser facet and prevent impurity particles diffusing to the facet. Finally the facet is coated with oxidative optical film. The test results show that the output power of the semiconductor laser with the ZnSe coated layer is 13% higher than that of the Si coated layer and 47% higher than that of the oxide coated film. The device coated oxide film is damaged when current is 4.5 A and the device coated with Si layer is damaged when current is 5.5 A the final failed device is coated with ZnSe layer. In conclusion the method of coating ZnSe layer on the semiconductor laser facet can prevent effectively the catastrophic optical mirror damage and increase the output power of semiconductor lasers. 2010 IEEE.
	Operation of the CSNS Penning surface H~- ion source 期刊论文 OAI收割 Science China Press, 2010, 页码: 4 作者: Xu XB(徐晓冰) 收藏 \| 浏览/下载：57/0 \| 提交时间：2015/12/14 CSNS Penning H~- ion source discharge chamber current emittance
	Production of pulsed ion beams by ECR ion source afterglow mode 期刊论文 OAI收割 HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2001, 卷号: 25, 期号: 3, 页码: 1029-1034 作者: Zhang, ZM; Guo, XH; Song, P; Zhang, XZ; Li, JY \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2010/10/29 ECR ion source afterglow mode peak current high charge state
	Radiation damage and wettability change of low energy C+ implanted polytetrafluoroethylene 期刊论文 OAI收割 Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2001, 卷号: 84, 期号: 3, 页码: 200-204 J. Z. Zhang; X. Y. Ye; X. J. Yu; H. D. Li 收藏 \| 浏览/下载：25/0 \| 提交时间：2012/04/14 ion implantation PTFE carbon ion wettability current ion-source