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	Halogenated flame retardants in the sediments of the Chinese Yellow Sea and East China Sea 期刊论文 OAI收割 CHEMOSPHERE, 2019, 卷号: 234, 页码: 365-372 作者: Li, YN; Zhen, XM; Liu, L; Tian, CG; Pan, XH \| 收藏 \| 浏览/下载：27/0 \| 提交时间：2020/07/08 DBDPE Yellow Sea Long-range transport Sediment Deposition zone Brominated flame retardants
	Evolution Pattern of Tailings Flow from Dam Failure and the Buffering Effect of Debris Blocking Dams 期刊论文 OAI收割 WATER, 2019, 卷号: 11, 期号: 11, 页码: - 作者: Wang, Guangjin; Tian, Sen; Hu, Bin; Xu, Zhifa; Chen, Jie \| 收藏 \| 浏览/下载：30/0 \| 提交时间：2020/04/08 tailings pond leaked tailings flow dam failure impact force deposition range debris blocking dam
	Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文 OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者: Zhang T. 收藏 \| 浏览/下载：31/0 \| 提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn TMGa AsH3 and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power their temperatures were detected by a thermocouple and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm In0.82Ga0.18As absorption layer with the thickness of 2.8 m and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied the curves of the I-V characteristics the range of response spectrum and the detectivity (D*) were obtained. (2013) Trans Tech Publications Switzerland.
	Effect of adding Cr on magnetic properties and metallic behavior in MnTe film (EI CONFERENCE) 会议论文 OAI收割作者: Li J.; Li J.; Li J. 收藏 \| 浏览/下载：43/0 \| 提交时间：2013/03/25 Mn1 - xCrxTe films with x = 0 0.02 and 0.05 was synthesized by pulsed laser deposition and crystallize in hexagonal NiAs-type structure. The spin glass behavior predicted before by Monte Carlo calculation is observed in the MnTe film. This behavior is destroyed by adding Cr in the MnTe film. The temperature dependence of magnetization shows a sharp rise at around 66 K due to the magneto-elastic coupling. Metallic behavior is observed in the MnTe film in the temperature range 120-220 K which is ascribed to the magnetic ordering. The metallic behavior disappears with adding Cr because adding Cr ions destroys the magnetic ordering which is mediated by the sp-d exchange interaction between the Cr ions. 2012 Elsevier B.V.
	ZnO films growth at different temperature on the substrate of Corning glass by MOCVD (EI CONFERENCE) 会议论文 OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者: Zhao J.; Gao X.; Wang C.; Tang W. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 We deposited ZnO films on Corning glass substrate by metal-organic chemical vapor deposition (MOCVD). We found the diffraction (002) peak at ~34.46 indicating that the ZnO thin films were C-oriented. ZnO films were highly transparent with a transmission ratio larger than 85% in the visible range. The surface morphology of the films was observed by atomic force microscopy (AFM). (2010) Trans Tech Publications.
	Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films (EI CONFERENCE) 会议论文 OAI收割 Shan C. X.; Zhang J. Y.; Yao B.; Shen D. Z.; Fan X. W.; Choy K. L. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 Zinc oxide (ZnO) films have been prepared on glass substrate in layer-by-layer mode using an atomic-layer deposition (ALD) technique and a metal-semiconductor-metal structured photodetector has been fabricated on the ZnO films employing interdigital Au as metal contacts. The photodetector shows a cutoff wavelength at around 390 nm and has an obvious responsivity in the whole UVA spectral range. Because the response of the ZnO photodetector covers the whole UV solar irradiation that can reach the earth the photodetector promises to be useful in monitoring UV solar irradiation to protect people from harm caused by the solar irradiation. Furthermore the capability of preparing large-area uniform ZnO films of ALD makes it favorable for possible mass production of this kind of photodetector. 2009 American Vacuum Society.
	MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文 OAI收割 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198 Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.) 收藏 \| 浏览/下载：40/0 \| 提交时间：2010/04/11 metamorphic long wavelength quantum dots molecular beam epitaxy MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION 1.3 MU-M GAAS EMISSION RANGE ISLANDS ARRAYS LASERS