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	High Resolution Crossed Molecular Beams Study of the H+HD -> H-2+D Reaction 期刊论文 OAI收割 CHINESE JOURNAL OF CHEMICAL PHYSICS, 2019, 卷号: 32, 期号: 1, 页码: 123-128 作者: Wang, Xing-an; Yuan, Dao-fu; Chen, Wen-tao; Yu, Sheng-rui; Sang, Ji-wei \| 收藏 \| 浏览/下载：324/0 \| 提交时间：2019/06/20 Crossed molecular beams Velocity map ion imaging Threshold ionization Forward scattering oscillations High resolution Differential cross sections
	High resolution crossed molecular beams study of the h+hd -> h-2+d reaction 期刊论文 iSwitch采集 Chinese journal of chemical physics, 2019, 卷号: 32, 期号: 1, 页码: 123-128 作者: Sang, Ji-wei; Yuan, Dao-fu; Chen, Wen-tao; Yu, Sheng-rui; Luo, Chang 收藏 \| 浏览/下载：325/0 \| 提交时间：2019/05/08 Crossed molecular beams Velocity map ion imaging Threshold ionization Forward scattering oscillations High resolution Differential cross sections
	Learning Saliency by MRF and Differential Threshold 期刊论文 OAI收割 ieee transactions on cybernetics, 2013, 卷号: 43, 期号: 6, 页码: 2032-2043 作者: Zhu, Guokang; Wang, Qi; Yuan, Yuan; Yan, Pingkun 收藏 \| 浏览/下载：50/0 \| 提交时间：2015/05/29 Computer vision differential threshold machine learning Markov random field (MRF) saliency detection visual attention
	Global stability of an age-structured sir epidemic model with pulse vaccination strategy 期刊论文 OAI收割 JOURNAL OF SYSTEMS SCIENCE & COMPLEXITY, 2012, 卷号: 25, 期号: 3, 页码: 417-429 作者: Liu Helong; Yu Jingyuan; Zhu Guangtian \| 收藏 \| 浏览/下载：20/0 \| 提交时间：2021/01/14 INFECTION-AGE THRESHOLD MEASLES Impulsive differential equations impulsive period infection age infection-free situation optimal vaccination strategy
	Theoretical analysis of emission characteristics of second-order distributed feedback semiconductor lasers (EI CONFERENCE) 会议论文 OAI收割 Semiconductor Lasers and Applications IV, October 18, 2010 - October 19, 2010, Beijing, China 作者: Liu Y.; Liu Y.; Qin L.; Liu Y.; Wang L. 收藏 \| 浏览/下载：31/0 \| 提交时间：2013/03/25 Based on the modified coupled-wave theory the emission characteristics including threshold gain photon density distribution in the cavity and external differential quantum efficiency for second-order DFB lasers are investigated. Numerical simulation results show that for given device structure with wavelength of 1.55 m the feedback coupling coefficient and the surface radiation coupling coefficient of the second-order grating have great influence on the emission characteristics of the device. By choosing different duty cycles of the grating we can change the two coupling coefficients which affect the emission characteristics. For an overall consideration an optimal duty cycle of 0.43 is chosen. The optimized results show that the device works without degeneracy modes and spatial burning hole. Besides the side-mode suppress ratio (SMSR) and external differential quantum efficiency reach as high as 42 dB and 47% respectively. 2010 SPIE.
	808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：31/0 \| 提交时间：2013/03/25 808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.
	A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang L.; Wang L.; Wang L.; Liu Y.; Liu Y. 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m 150m and 100m-diameter with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power threshold current lasing spectra far-field distribution etc. 2008 SPIE.
	A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD 期刊论文 OAI收割 semiconductor science and technology, 2006, 卷号: 21, 期号: 3, 页码: 306-310 Zhang RY; Wang W; Zhou F; Wang BJ; Wang LF; Bian J; Zhao LJ; Zhu HL; Jian SS 收藏 \| 浏览/下载：64/0 \| 提交时间：2010/04/11 LINEWIDTH ENHANCEMENT FACTOR THRESHOLD CURRENT-DENSITY DIFFERENTIAL GAIN MQW LASERS
	Modelling and analysis of integrated pest management strategy 期刊论文 OAI收割 DISCRETE AND CONTINUOUS DYNAMICAL SYSTEMS-SERIES B, 2004, 卷号: 4, 期号: 3, 页码: 759-768 作者: Tang, SY; Chen, LS \| 收藏 \| 浏览/下载：18/0 \| 提交时间：2018/07/30 IPM strategy state-dependent impulsive differential equations economic threshold periodic solution