中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共5条,第1-5条 帮助

条数/页: 排序方式:
Comparative Chloroplast Genome Analysis of Wax Gourd (Benincasa hispida) with Three Benincaseae Species, Revealing Evolutionary Dynamic Patterns and Phylogenetic Implications 期刊论文  OAI收割
GENES, 2022, 卷号: 13, 期号: 3, 页码: 461
作者:  
Song, Weicai;  Chen, Zimeng;  He, Li;  Feng, Qi;  Zhang, Hongrui
  |  收藏  |  浏览/下载:12/0  |  提交时间:2024/04/30
Functional Divergence of the Glutamine Phosphoribosyl Pyrophosphate Amidotransferase (ASE) Gene Family in Arabidopsis 期刊论文  OAI收割
JOURNAL OF EVOLUTIONARY BIOCHEMISTRY AND PHYSIOLOGY, 2021, 卷号: 57, 期号: 6, 页码: 1310-1321
作者:  
Liu, Hai-Jing;  Yang, Zhi-Ling;  Ren, Lin-Ling;  Wang, Yi-Ming;  Wang, Xin
  |  收藏  |  浏览/下载:23/0  |  提交时间:2023/02/24
High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Zhang Y.;  Liu Y.;  Liu Y.;  Liu Y.;  Qin L.
收藏  |  浏览/下载:31/0  |  提交时间:2013/03/25
High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation  lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure  a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure  with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.  
Comparison of evolutionary rates in the mitochondrial DNA cytochrome b gene and control region and their implications for phylogeny of the Cobitoidea (Teleostei : Cypriniformes) 期刊论文  OAI收割
MOLECULAR PHYLOGENETICS AND EVOLUTION, 2006, 卷号: 39, 期号: 2, 页码: 347-357
作者:  
Tang, QY;  Liu, HZ;  Mayden, R;  Xiong, BX
收藏  |  浏览/下载:58/3  |  提交时间:2010/10/13
High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.