中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
长春光学精密机械与物... [4]
理论物理研究所 [1]
采集方式
OAI收割 [5]
内容类型
会议论文 [4]
期刊论文 [1]
发表日期
2015 [1]
2008 [2]
2007 [1]
2005 [1]
学科主题
Physics [1]
筛选
浏览/检索结果:
共5条,第1-5条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Universal Expression of Efficiency at Maximum Power: A Quantum-Mechanical Brayton Engine Working with a Single Particle Confined in a Power-Law Trap
期刊论文
OAI收割
COMMUNICATIONS IN THEORETICAL PHYSICS, 2015, 卷号: 64, 期号: 6, 页码: 671-675
作者:
Ye, ZL
;
Li, WS
;
Lai, YM
;
He, JZ
;
Wang, JH
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2016/11/21
quantum-mechanical Brayton engine
universal expression
efficiency at maximum power
Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE)
会议论文
OAI收割
Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China
作者:
Qin L.
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/03/25
By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current
efficiency
emission wavelength
and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived
and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time
the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results
it is shown that the device can still operate at high temperature condition.
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:
Wang Y.
;
Wang L.
;
Wang L.
;
Wang L.
;
Liu Y.
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
808nm high power diode lasers
which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems
have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers
and they could lead to new applications where space
weight and electrical power are critical. High efficiency devices generate less waste heat
which means less strain on the cooling system and more tolerance to thermal conductivity variation
a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s
1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars
we fabricate a 1 3 arrays
the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A
the slope efficiency is 3.37 W/A. 2008 SPIE.
High power VCSEL device with periodic gain active region (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:
Zhang Y.
;
Liu Y.
;
Liu Y.
;
Liu Y.
;
Qin L.
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2013/03/25
High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation
lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure
a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure
with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.
LD-Pumped all-solid-stated green laser with high polarization rate and high conversion efficiency (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
Hao E.-J.
;
Tan H.-M.
;
Yan C.-L.
;
Qian L.-S.
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
A high-power-output and high polarization rate Nd:YVO4/ KTP green laser has been presented. By analyzing the factors which affect the conversion efficiency and polarization rate
we used a short folded-cavity resonator
the maximum output power of 320 mW is obtained at 532 nm with the LD pumping power of 1 W
the optical-to-optical conversion efficiency is 32% and the polarization rate is 550:1.