中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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A New Polymer Electron Acceptor Based on Thiophene-S,S-dioxide Unit for Organic Photovoltaics 期刊论文  OAI收割
MACROMOLECULAR RAPID COMMUNICATIONS, 2018, 卷号: 39, 期号: 2
作者:  
Meng, Bin;  Miao, Junhui;  Liu, Jun;  Wang, Lixiang
  |  收藏  |  浏览/下载:32/0  |  提交时间:2019/04/09
Quantitative Femtosecond Charge Transfer Dynamics at Organic/Electrode Interfaces Studied by Core-Hole Clock Spectroscopy 期刊论文  OAI收割
ADVANCED MATERIALS, 2014, 卷号: 26, 期号: 46, 页码: 7880—7888
Cao, L; Gao, XY; Wee, ATS; Qi, DC
收藏  |  浏览/下载:33/0  |  提交时间:2015/03/13
Studies of the EPR parameters and defect models for three Er(3+) impurity centers in ThO(2) crystals 期刊论文  OAI收割
Spectrochimica Acta Part a-Molecular and Biomolecular Spectroscopy, 2010, 卷号: 77, 期号: 1, 页码: 276-278
W. C. Zheng; G. Q. Qu; H. G. Liu; W. Q. Yang
收藏  |  浏览/下载:29/0  |  提交时间:2012/04/13
Highly Efficient Phosphorescent Organic Light-Emitting Diodes Hosted by 1,2,4-Triazole-Cored Triphenylamine Derivatives: Relationship between Structure and Optoelectronic Properties 期刊论文  OAI收割
journal of physical chemistry c, 2010, 卷号: 114, 期号: 1, 页码: 601-609
Tao YT; Wang Q; Ao L; Zhong C; Yang CL; Qin JG; Ma DG
收藏  |  浏览/下载:26/0  |  提交时间:2012/06/07
First-principles study of lithium adsorption on Si(100)2 x 1 and Ge(100)2 x 1 surface at 1.0 monolayer coverage 期刊论文  OAI收割
Chemical Physics, 2006, 卷号: 325, 期号: 2, 页码: 525-530
Z. G. Wang; X. T. Zu; J. L. Nie; H. Y. Xiao
收藏  |  浏览/下载:22/0  |  提交时间:2012/04/14
Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.  
Lifetime of isomer in high charge states 期刊论文  OAI收割
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2003, 卷号: 27, 期号: 7, 页码: 603-609
作者:  
Wang, JX;  Wu, HY;  Jin, GM
  |  收藏  |  浏览/下载:18/0  |  提交时间:2010/10/29
Dynamics of two-level systems driven by dc-ac fields 期刊论文  OAI收割
PHYSICS LETTERS A, 1996, 卷号: 217, 期号: 41004, 页码: 225-231
作者:  
Wang, H;  Zhao, XG
  |  收藏  |  浏览/下载:22/0  |  提交时间:2012/08/29