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	Raman spectroscopy-based screening of zircon for reliable water content and oxygen isotope measurements 期刊论文 OAI收割 AMERICAN MINERALOGIST, 2022, 卷号: 107, 期号: 5, 页码: 936-945 作者: Yang, Chuan-Mao; Xu, Yi-Gang; Xia, Xiao-Ping; Gao, Yu-Ya; Zhang, Wan-Feng \| 收藏 \| 浏览/下载：35/0 \| 提交时间：2022/07/07 Zircon water content A-type granite Raman spectroscopy full-width at half maximum (FWHM) Raman shift SIMS trace element
	Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文 OAI收割 2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China Yang X.; Su S.; Yi X.; Mei T. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications Switzerland.
	Theoretical study of the light scattering from gold nanotubes: Effects of wall thickness 期刊论文 OAI收割 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2007, 卷号: 454, 页码: 685-689 作者: Zhu, Jian \| 收藏 \| 浏览/下载：13/0 \| 提交时间：2018/05/31 gold nanotubes surface plasmon resonance (SPR) light scattering effective mean free path quasi-static full width at half maximum (FWHM)
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：35/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.