机构

• 地质与地球物理研究所 [1]
• 长春光学精密机械与物... [1]
• 数学与系统科学研究院 [1]

采集方式

• OAI收割 [3]

内容类型

• 期刊论文 [2]
• 会议论文 [1]

发表日期

• 2021 [1]
• 2016 [1]
• 2007 [1]

学科主题

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Geochemical Characteristics of Hydrothermal Volatiles From Southeast China and Their Implications on the Tectonic Structure Controlling Heat Convection 期刊论文  OAI收割 FRONTIERS IN EARTH SCIENCE, 2021, 卷号: 9, 页码: 13 作者:  Tian, Jiao;  Li, Yiman;  Zhou, Xiaocheng;  Pang, Zhonghe;  Li, Liwu   |  收藏  |  浏览/下载：43/0  |  提交时间：2022/07/04 Southeast China  geothermal gas  heat-control structure  thermal background  hot springs   Stabilisation of unstable cascaded heat partial differential equation system subject to boundary disturbance 期刊论文  OAI收割 IET CONTROL THEORY AND APPLICATIONS, 2016, 卷号: 10, 期号: 9, 页码: 1027-1039 作者:  Kang, Wen;  Guo, Bao-Zhu   |  收藏  |  浏览/下载：35/0  |  提交时间：2018/07/30 stability  partial differential equations  observers  variable structure systems  state feedback  control system synthesis  numerical analysis  unstable cascaded heat partial differential equation systems  boundary disturbance  boundary stabilisation  interconnection  unknown input type observer  sliding mode control method  Filippov type solution  state feedback  backstepping transformation  active disturbance rejection control  disturbance estimator  output feedback control  closed loop system  stability  numerical simulations   The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.