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	MOVPE-Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications 期刊论文 OAI收割 Physica Status Solidi B-Basic Solid State Physics, 2018, 卷号: 255, 期号: 12, 页码: 7 作者: Sala, E. M.; Arikan, I. F.; Bonato, L.; Bertram, F.; Veit, P. \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2019/09/17 AlP barrier GaP InGaSb MOVPE growth nanoscale memory quantum dots hole localization ohmic contacts luminescence resistance Physics
	First-principles study on the electronic, optical, and transport properties of monolayer alpha- and beta-GeSe 期刊论文 OAI收割 PHYSICAL REVIEW B, 2017, 卷号: 96, 期号: 24 作者: Li, Jing; Ni, Gang; Shao, Hezhu; Zhang, Hao; Lu, Hongliang \| 收藏 \| 浏览/下载：42/0 \| 提交时间：2018/12/04 Carrier Mobility Theoretical Prediction Thermal-conductivity Black Phosphorus Hole Mobility Graphene Carbon Semiconductor Localization Nanoribbons
	Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文 OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54320, 54320 作者: Ning JQ; Xu SJ; Ruan XZ; Ji Y; Zheng HZ \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2012/01/06 WELLS RELAXATION HOLE PHOTOLUMINESCENCE SEMICONDUCTORS LOCALIZATION TRANSITIONS EXCITONS CARRIERS GROWTH Wells Relaxation Hole Photoluminescence Semiconductors Localization Transitions Excitons Carriers Growth
	Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy 期刊论文 OAI收割 physical review b, 2002, 卷号: 66, 期号: 19, 页码: art.no.195321 作者: Ye XL 收藏 \| 浏览/下载：71/0 \| 提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY EXCITON LOCALIZATION INVERSION ASYMMETRY COMMON-ATOM LIGHT-HOLE HETEROSTRUCTURES SUPERLATTICES POLARIZATION SEGREGATION MORPHOLOGY