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	Efficient 2.1 mu m laser action of an Ho:ScYSiO5 (Ho:SYSO) mixed crystal at room temperature 期刊论文 OAI收割 LASER PHYSICS, 2019, 卷号: 29, 期号: 5 作者: Duan, Xiaoming; Qian, Chuanpeng; Zheng, Lihe; Shen, Yingjie; Su, Liangbi \| 收藏 \| 浏览/下载：36/0 \| 提交时间：2019/12/26 solid-state laser Ho:SYSO in-band pumping
	Efficient Ho:CaF2 laser intracavity-pumped by a Tm:LuAG laser in-band pumped at 1.6 mu m 期刊论文 OAI收割 LASER PHYSICS LETTERS, 2018, 卷号: 15, 期号: 9 作者: Duan, X. M.; Guo, X. S.; Yao, B. Q.; Zheng, L. H.; Su, L. B. \| 收藏 \| 浏览/下载：41/0 \| 提交时间：2018/12/28 intra-cavity laser Ho:CaF2 Tm:LuAG in-band pumping
	Experiments of second harmonic generation output in pulsed TEA CO 2 laser (EI CONFERENCE) 会议论文 OAI收割 High-Power Lasers and Applications V, October 18, 2010 - October 19, 2010, Beijing, China 作者: Li D. 收藏 \| 浏览/下载：52/0 \| 提交时间：2013/03/25 It is always the hot subject to realize the output of high-power laser in the range of 3-5m wavelength. This rang of wave band has greatly important applications in military because it located in the atmosphere window. Generally there are two ways to obtain this range of laser wavelength. One way is through optical parameter oscillation (OPO) from shorter laser wavelength and the other is through second harmonic generation (SHG) from longer laser wavelength. Firstly the comparison between tow nonlinear crystals ZnGeP2 and AgGaSe2 is conducted for their nonlinear coefficient and damaging threshold in theory. The theoretical results show that the crystal AgGaSe 2 is more suitable for the SHG of pulsed TEA CO2 laser. When using pulsed TEA CO2 laser with wavelength of 9.3m to pumping AgGaSe2 SHG crystal the wavelength of 4.65m is obtained. In the condition of repetition rate 100Hz the upmost output power of single pulse is up to level of 1W which corresponding efficiency of SHG is about 6%. The experimental results show that the polarization of laser beam has greatly influence on the SHG output of the crystal. Under the radiation of 3MW/cm 2 from fundamental wave and the right position for maximal SHG output in the crystal when polarization of laser beam rotates 4.5 the SHG output of energy decrease about 30%. The research of this paper will make a foundation for further development of mid-infrared laser. 2010 Copyright SPIE - The International Society for Optical Engineering.
	The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者: Li J.; Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Li J. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs This three QWs structure can add the quantum state of QW increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.