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	Effect of surfactants on the deformation of single droplet in shear flow studied by dissipative particle dynamics 期刊论文 OAI收割 MOLECULAR PHYSICS, 2018, 卷号: 116, 期号: 14, 页码: 1851-1861 作者: Zhang, Yuzhou; Xu, Junbo; He, Xianfeng \| 收藏 \| 浏览/下载：45/0 \| 提交时间：2018/07/17 Droplet deformation interface phenomenon inertia non-uniform distribution DPD
	Moving contact line problem: Advances and perspectives 期刊论文 OAI收割 Theoretical & Applied Mechanics Letters, 2014, 期号: 3, 页码: 7-23+6 作者: Zhao YP(赵亚溥) 收藏 \| 浏览/下载：45/0 \| 提交时间：2015/09/02 solid–liquid interface moving contact line Huh–Scriven paradox molecular kinetic theory electrowetting electro-elasto-capillarity slip boundary conditions cell spreading Zhurkov–Bell model emergent phenomenon
	Multi-domain Spectral Immersed Interface Method for Solving Elliptic Equation with a Global Description of Discontinuous Functions 期刊论文 OAI收割 CHINESE JOURNAL OF AERONAUTICS, 2012, 卷号: 25, 期号: 3, 页码: 297-310 作者: \| 收藏 \| 浏览/下载：32/0 \| 提交时间：2021/02/02 BOUNDARY METHOD GIBBS PHENOMENON SINGULAR SOURCES JUMP CONDITIONS FLOW ACCURACY ORDER COEFFICIENTS SCHEMES HEART computational aerodynamics immersed interface method immersed boundary method Chebyshev spectral method domain decomposition method
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：53/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	Analysis of electromagnetic propagation in birefringent thin film 期刊论文 OAI收割 sci. china ser. g-phys. mech. astron., 2005, 卷号: 48, 期号: 5, 页码: 513, 520 齐红基; Wang JG; 邵建达; 范正修收藏 \| 浏览/下载：880/116 \| 提交时间：2009/09/22 birefringent thin film interface homolateral refraction behavior wide-angle Brewster's phenomenon